IDT, Integrated Device Technology Inc 7164S85DB
- Part Number:
- 7164S85DB
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3722396-7164S85DB
- Description:
- IC SRAM 64KBIT 85NS 28CDIP
- Datasheet:
- IDT Suffixes
IDT, Integrated Device Technology Inc 7164S85DB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 7164S85DB.
- Factory Lead Time15 Weeks
- Mounting TypeThrough Hole
- Package / Case28-CDIP (0.600, 15.24mm)
- Supplier Device Package28-CerDip
- Operating Temperature-55°C~125°C TA
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Memory Size64Kb 8K x 8
- Memory TypeVolatile
- Access Time85ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page85ns
- RoHS StatusNon-RoHS Compliant
7164S85DB Overview
The package or case of this particular device is a 28-CDIP (0.600, 15.24mm), which is a type of ceramic dual in-line package. This package is commonly used for integrated circuits and offers a compact and durable design. The supplier device package is a 28-CerDip, which is also a ceramic dual in-line package, but with a different pin configuration. The packaging for this device is in a tube, making it easy to store and transport. Its part status is active, indicating that it is currently in production and available for purchase. This device utilizes SRAM technology, specifically asynchronous SRAM, which is known for its fast access times. It requires a voltage supply of 4.5V to 5.5V and has a memory size of 64Kb 8K x 8. The access time for this device is 85ns, ensuring efficient and quick data retrieval. Its memory interface is parallel, allowing for simultaneous data transfer. The write cycle time for a word or page is also 85ns, making it an efficient and reliable choice for memory storage.
7164S85DB Features
Package / Case: 28-CDIP (0.600, 15.24mm)
7164S85DB Applications
There are a lot of Renesas Electronics America Inc.
7164S85DB Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
The package or case of this particular device is a 28-CDIP (0.600, 15.24mm), which is a type of ceramic dual in-line package. This package is commonly used for integrated circuits and offers a compact and durable design. The supplier device package is a 28-CerDip, which is also a ceramic dual in-line package, but with a different pin configuration. The packaging for this device is in a tube, making it easy to store and transport. Its part status is active, indicating that it is currently in production and available for purchase. This device utilizes SRAM technology, specifically asynchronous SRAM, which is known for its fast access times. It requires a voltage supply of 4.5V to 5.5V and has a memory size of 64Kb 8K x 8. The access time for this device is 85ns, ensuring efficient and quick data retrieval. Its memory interface is parallel, allowing for simultaneous data transfer. The write cycle time for a word or page is also 85ns, making it an efficient and reliable choice for memory storage.
7164S85DB Features
Package / Case: 28-CDIP (0.600, 15.24mm)
7164S85DB Applications
There are a lot of Renesas Electronics America Inc.
7164S85DB Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
7164S85DB More Descriptions
SRAM Chip Async Single 5V 64K-Bit 8K x 8 85ns 28-Pin CDIP
5.0V 8K x 8 Asynchronous Static RAM
IC SRAM 64KBIT PARALLEL 28CERDIP
SRAM 64K(8KX8) BICMOS STAT RAM
5.0V 8K x 8 Asynchronous Static RAM
IC SRAM 64KBIT PARALLEL 28CERDIP
SRAM 64K(8KX8) BICMOS STAT RAM
The three parts on the right have similar specifications to 7164S85DB.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusView Compare
-
7164S85DB15 WeeksThrough Hole28-CDIP (0.600, 15.24mm)28-CerDip-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile85nsSRAMParallel85nsNon-RoHS Compliant-
-
15 WeeksThrough Hole28-CDIP (0.300, 7.62mm)28-CDIP-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile35nsSRAMParallel35nsNon-RoHS Compliant
-
15 WeeksThrough Hole28-CDIP (0.300, 7.62mm)28-CDIP-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile20nsSRAMParallel20nsNon-RoHS Compliant
-
15 WeeksThrough Hole28-CDIP (0.600, 15.24mm)28-CerDip-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile35nsSRAMParallel35nsNon-RoHS Compliant
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