IDT, Integrated Device Technology Inc 7164L35TDB

Name: 7164L35TDB
Brand: IDT, Integrated Device Technology Inc
SKU: 3722319-7164L35TDB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 7164L35TDB

Manufacturer:: IDT, Integrated Device Technology Inc

Ventron No:: 3722319-7164L35TDB

Description:: IC SRAM 64KBIT 35NS 28CDIP

ECAD Model:

Datasheet:: IDT Suffixes

Specifications

IDT, Integrated Device Technology Inc 7164L35TDB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 7164L35TDB.

Factory Lead Time
15 Weeks
Mounting Type
Through Hole
Package / Case
28-CDIP (0.300, 7.62mm)
Supplier Device Package
28-CDIP
Operating Temperature
-55°C~125°C TA
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
SRAM - Asynchronous
Voltage - Supply
4.5V~5.5V
Memory Size
64Kb 8K x 8
Memory Type
Volatile
Access Time
35ns
Memory Format
SRAM
Memory Interface
Parallel
Write Cycle Time - Word, Page
35ns
RoHS Status
Non-RoHS Compliant

Description

7164L35TDB Overview
This product is a 28-CDIP (0.300, 7.62mm) package, which is packaged in a tube. It is currently in active production and has a moisture sensitivity level of 1 (Unlimited). The technology used is SRAM - Asynchronous and the memory type is volatile. The access time for this product is 35ns and it is in the SRAM memory format. The write cycle time for each word or page is 35ns. This product is currently not compliant with RoHS regulations.

7164L35TDB Features
Package / Case: 28-CDIP (0.300, 7.62mm)

7164L35TDB Applications
There are a lot of Renesas Electronics America Inc.
7164L35TDB Memory applications.

supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card

7164L35TDB More Descriptions

Asynchronous Active 2011 Parallel (Memory Format) Memory 125C 5.5V 64kb 90mA
SRAM Chip Async Single 5V 64K-Bit 8K x 8 35ns 28-Pin CDIP
5.0V 8K x 8 Asynchronous Static RAM
IC SRAM 64KBIT PARALLEL 28CDIP
SRAM 64K(8KX8) BICMOS STAT RAM

Product Comparison

The three parts on the right have similar specifications to 7164L35TDB.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Memory Size

Memory Type

Access Time

Memory Format

Memory Interface

Write Cycle Time - Word, Page

RoHS Status

Base Part Number

View Compare
7164L35TDB

IDT, Integrated Device Technology Inc

15 Weeks

Through Hole

28-CDIP (0.300, 7.62mm)

28-CDIP

-55°C~125°C TA

Tube

Active

1 (Unlimited)

SRAM - Asynchronous

4.5V~5.5V

64Kb 8K x 8

Volatile

35ns

SRAM

Parallel

35ns

Non-RoHS Compliant

-

-
7164S25YGI

IDT, Integrated Device Technology Inc

15 Weeks

Surface Mount

28-BSOJ (0.300, 7.62mm Width)

28-SOJ

-40°C~85°C TA

Tube

Active

3 (168 Hours)

SRAM - Asynchronous

4.5V~5.5V

64Kb 8K x 8

Volatile

25ns

SRAM

Parallel

25ns

ROHS3 Compliant

IDT7164

7164L35TDB vs 7164S25YGI
7164L20TPG

IDT, Integrated Device Technology Inc

-

Through Hole

28-DIP (0.300, 7.62mm)

28-PDIP

0°C~70°C TA

Tube

Obsolete

1 (Unlimited)

SRAM - Asynchronous

4.5V~5.5V

64Kb 8K x 8

Volatile

20ns

SRAM

Parallel

20ns

-

IDT7164

7164L35TDB vs 7164L20TPG
7164S85DB

IDT, Integrated Device Technology Inc

15 Weeks

Through Hole

28-CDIP (0.600, 15.24mm)

28-CerDip

-55°C~125°C TA

Tube

Active

1 (Unlimited)

SRAM - Asynchronous

4.5V~5.5V

64Kb 8K x 8

Volatile

85ns

SRAM

Parallel

85ns

Non-RoHS Compliant

-

7164L35TDB vs 7164S85DB