IDT, Integrated Device Technology Inc 7164L100DB
- Part Number:
- 7164L100DB
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3234352-7164L100DB
- Description:
- IC SRAM 64KBIT 100NS 28CDIP
- ECAD Model:
-
- Datasheet:
- IDT Suffixes
IDT, Integrated Device Technology Inc 7164L100DB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 7164L100DB.
- Factory Lead Time15 Weeks
- Mounting TypeThrough Hole
- Package / Case28-CDIP (0.600, 15.24mm)
- Operating Temperature-55°C~125°C TA
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Memory Size64Kb 8K x 8
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page100ns
- RoHS StatusNon-RoHS Compliant
7164L100DB Overview
This product comes in a 28-CDIP package with a size of 0.600, 15.24mm. It has an operating temperature range of -55°C to 125°C TA and is packaged in a tube. The Moisture Sensitivity Level (MSL) is 1, meaning it has unlimited moisture sensitivity. The technology used is SRAM - Asynchronous and it has a memory size of 64Kb, with 8K x 8 configuration. This is a volatile memory type, in SRAM format, and has a parallel memory interface. It is also important to note that this product is non-RoHS compliant.
7164L100DB Features
Package / Case: 28-CDIP (0.600, 15.24mm)
7164L100DB Applications
There are a lot of Renesas Electronics America Inc.
7164L100DB Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
This product comes in a 28-CDIP package with a size of 0.600, 15.24mm. It has an operating temperature range of -55°C to 125°C TA and is packaged in a tube. The Moisture Sensitivity Level (MSL) is 1, meaning it has unlimited moisture sensitivity. The technology used is SRAM - Asynchronous and it has a memory size of 64Kb, with 8K x 8 configuration. This is a volatile memory type, in SRAM format, and has a parallel memory interface. It is also important to note that this product is non-RoHS compliant.
7164L100DB Features
Package / Case: 28-CDIP (0.600, 15.24mm)
7164L100DB Applications
There are a lot of Renesas Electronics America Inc.
7164L100DB Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
7164L100DB More Descriptions
SRAM Chip Async Single 5V 64K-Bit 8K x 8 100ns 28-Pin CDIP
Asynchronous Active 2011 Parallel (Memory Format) Memory 125C 5.5V 64kb 90mA
5.0V 8K x 8 Asynchronous Static RAM
IC SRAM 64KBIT PARALLEL 28CERDIP
SRAM 64K(8KX8) BICMOS STAT RAM
Asynchronous Active 2011 Parallel (Memory Format) Memory 125C 5.5V 64kb 90mA
5.0V 8K x 8 Asynchronous Static RAM
IC SRAM 64KBIT PARALLEL 28CERDIP
SRAM 64K(8KX8) BICMOS STAT RAM
The three parts on the right have similar specifications to 7164L100DB.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSupplier Device PackageBase Part NumberAccess TimeView Compare
-
7164L100DB15 WeeksThrough Hole28-CDIP (0.600, 15.24mm)-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8VolatileSRAMParallel100nsNon-RoHS Compliant---- -
-Through Hole28-DIP (0.300, 7.62mm)0°C~70°C TATubeObsolete1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8VolatileSRAMParallel20ns-28-PDIPIDT716420ns
-
15 WeeksThrough Hole28-CDIP (0.600, 15.24mm)-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8VolatileSRAMParallel85nsNon-RoHS Compliant28-CerDip-85ns
-
15 WeeksThrough Hole28-CDIP (0.300, 7.62mm)-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8VolatileSRAMParallel35nsNon-RoHS Compliant28-CDIP-35ns
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