6116LA55DB

IDT, Integrated Device Technology Inc 6116LA55DB

Part Number:
6116LA55DB
Manufacturer:
IDT, Integrated Device Technology Inc
Ventron No:
3235731-6116LA55DB
Description:
IC SRAM 16KBIT 55NS 24CDIP
ECAD Model:
Datasheet:
6116LA55DB

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Specifications
IDT, Integrated Device Technology Inc 6116LA55DB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 6116LA55DB.
  • Factory Lead Time
    15 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    24-CDIP (0.600, 15.24mm)
  • Operating Temperature
    -55°C~125°C TA
  • Packaging
    Tray
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    SRAM - Asynchronous
  • Voltage - Supply
    4.5V~5.5V
  • Base Part Number
    IDT6116
  • Memory Size
    16Kb 2K x 8
  • Memory Type
    Volatile
  • Memory Format
    SRAM
  • Memory Interface
    Parallel
  • Write Cycle Time - Word, Page
    55ns
  • RoHS Status
    Non-RoHS Compliant
Description
6116LA55DB Overview
The 24-CDIP (0.600, 15.24mm) package or case is designed to house the IDT6116, a volatile memory chip with a parallel memory interface. This technology, known as SRAM - Asynchronous, requires a voltage supply of 4.5V to 5.5V to function properly. The packaging for this chip is in the form of a tray, making it easy to handle and transport. Its part status is currently active, meaning it is readily available for purchase. The Moisture Sensitivity Level (MSL) for this chip is 1, indicating that it has an unlimited shelf life and does not require any special handling. It should be noted, however, that this chip is not compliant with RoHS regulations.

6116LA55DB Features
Package / Case: 24-CDIP (0.600, 15.24mm)


6116LA55DB Applications
There are a lot of Renesas Electronics America Inc.
6116LA55DB Memory applications.


multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
6116LA55DB More Descriptions
5.0V 2K x 8 Asynchronous Static RAM
IC SRAM 16KBIT PARALLEL 24CDIP
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
Product Comparison
The three parts on the right have similar specifications to 6116LA55DB.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Base Part Number
    Memory Size
    Memory Type
    Memory Format
    Memory Interface
    Write Cycle Time - Word, Page
    RoHS Status
    View Compare
  • 6116LA55DB
    6116LA55DB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    55ns
    Non-RoHS Compliant
    -
  • 6116LA120DB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    120ns
    Non-RoHS Compliant
  • 6116LA25DB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    25ns
    Non-RoHS Compliant
  • 6116LA150DB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    150ns
    Non-RoHS Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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