| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
NTB13N10G |
NTB18N06LT4G |
| Manufacturer: |
ON Semiconductor |
ON Semiconductor |
| Description: |
MOSFET N-CH 100V 13A D2PAK |
MOSFET N-CH 60V 15A D2PAK |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
TO-263-3, D2Pak (2 Leads Tab), TO-263AB |
TO-263-3, D2Pak (2 Leads Tab), TO-263AB |
| Surface Mount |
YES |
- |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
-55°C~175°C TJ |
| Packaging |
Tube |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
e3 |
| Pbfree Code |
no |
yes |
| Part Status |
Obsolete |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
2 |
2 |
| Terminal Finish |
MATTE TIN |
Tin (Sn) |
| Technology |
MOSFET (Metal Oxide) |
MOSFET (Metal Oxide) |
| Terminal Position |
SINGLE |
- |
| Terminal Form |
GULL WING |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
- |
| Time@Peak Reflow Temperature-Max (s) |
30 |
NOT SPECIFIED |
| Pin Count |
3 |
3 |
| JESD-30 Code |
R-PSSO-G2 |
R-PSSO-G2 |
| Qualification Status |
COMMERCIAL |
Not Qualified |
| Number of Elements |
1 |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
- |
| Power Dissipation-Max |
64.7W Ta |
48.4W Tc |
| Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
DRAIN |
| FET Type |
N-Channel |
N-Channel |
| Transistor Application |
SWITCHING |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
165m Ω @ 6.5A, 10V |
100m Ω @ 7.5A, 5V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
550pF @ 25V |
440pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
13A Ta |
15A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
20nC @ 5V |
| Drain to Source Voltage (Vdss) |
100V |
- |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
5V |
| Vgs (Max) |
±20V |
±10V |
| Drain Current-Max (Abs) (ID) |
13A |
- |
| Drain-source On Resistance-Max |
0.165Ohm |
- |
| Pulsed Drain Current-Max (IDM) |
39A |
45A |
| DS Breakdown Voltage-Min |
100V |
- |
| Avalanche Energy Rating (Eas) |
85 mJ |
- |
| RoHS Status |
ROHS3 Compliant |
RoHS Compliant |
| Lifecycle Status |
- |
LAST SHIPMENTS (Last Updated: 4 days ago) |
| Mount |
- |
Surface Mount |
| Number of Pins |
- |
3 |
| Published |
- |
2005 |
| ECCN Code |
- |
EAR99 |
| Additional Feature |
- |
LOGIC LEVEL COMPATIBLE |
| Subcategory |
- |
FET General Purpose Power |
| Voltage - Rated DC |
- |
60V |
| Current Rating |
- |
15A |
| Element Configuration |
- |
Single |
| Power Dissipation |
- |
48.4W |
| Rise Time |
- |
121ns |
| Fall Time (Typ) |
- |
42 ns |
| Turn-Off Delay Time |
- |
11 ns |
| Continuous Drain Current (ID) |
- |
15A |
| Gate to Source Voltage (Vgs) |
- |
10V |
| Drain to Source Breakdown Voltage |
- |
60V |
| Lead Free |
- |
Lead Free |
| Submit RFQ: |
Submit |
Submit |
