Part Number: NTB13N10G vs NTB18N06T4
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number: | NTB13N10G | NTB18N06T4 |
| Manufacturer: | ON Semiconductor | ON Semiconductor |
| Description: | MOSFET N-CH 100V 13A D2PAK | MOSFET N-CH 60V 15A D2PAK |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads Tab), TO-263AB | TO-263-3, D2Pak (2 Leads Tab), TO-263AB |
| Surface Mount | YES | YES |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -55°C~175°C TJ | -55°C~175°C TJ |
| Packaging | Tube | Tape & Reel (TR) |
| JESD-609 Code | e3 | e0 |
| Pbfree Code | no | no |
| Part Status | Obsolete | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 2 | 2 |
| Terminal Finish | MATTE TIN | TIN LEAD |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE | SINGLE |
| Terminal Form | GULL WING | GULL WING |
| Peak Reflow Temperature (Cel) | 260 | 240 |
| Reach Compliance Code | unknown | - |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 |
| Pin Count | 3 | 3 |
| JESD-30 Code | R-PSSO-G2 | R-PSSO-G2 |
| Qualification Status | COMMERCIAL | COMMERCIAL |
| Number of Elements | 1 | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 64.7W Ta | 48.4W Tc |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Case Connection | DRAIN | DRAIN |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | SWITCHING |
| Rds On (Max) @ Id, Vgs | 165m Ω @ 6.5A, 10V | 90m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V | 450pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 13A Ta | 15A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | 22nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 10V |
| Vgs (Max) | ±20V | ±20V |
| Drain Current-Max (Abs) (ID) | 13A | 15A |
| Drain-source On Resistance-Max | 0.165Ohm | 0.09Ohm |
| Pulsed Drain Current-Max (IDM) | 39A | 45A |
| DS Breakdown Voltage-Min | 100V | 60V |
| Avalanche Energy Rating (Eas) | 85 mJ | 61 mJ |
| RoHS Status | ROHS3 Compliant | Non-RoHS Compliant |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
 |
NTB18N0G | ONS | Compare | |
|
NTB18N06LG | ON Semiconductor | MOSFET N-CH 60V 15A D2PAK | Compare |
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NTB18N06L | ON Semiconductor | MOSFET N-CH 60V 15A D2PAK | Compare |
|
NTB18N06LT4G | ON Semiconductor | MOSFET N-CH 60V 15A D2PAK | Compare |
