Part Number: STGW15S120DF3 vs STGW40M120DF3

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Part Number: STGW15S120DF3 STGW40M120DF3
Manufacturer: STMicroelectronics STMicroelectronics
Description: IGBT 1200V 15A TO247 IGBT 1200V 80A 468W TO-247
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 40 Weeks 30 Weeks
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tube Tube
Part Status Active Active
Moisture Sensitivity Level (MSL) Not Applicable 1 (Unlimited)
ECCN Code EAR99 EAR99
Max Power Dissipation 259W 468W
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Part Number STGW15 STGW40
Input Type Standard Standard
Power - Max 259W 468W
Collector Emitter Voltage (VCEO) 2.05V 1.2kV
Max Collector Current 30A 80A
Reverse Recovery Time 270 ns 355 ns
Collector Emitter Breakdown Voltage 1.2kV 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V 1200V
Test Condition 600V, 15A, 22 Ω, 15V 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 15A 2.3V @ 15V, 40A
IGBT Type Trench Field Stop Trench Field Stop
Gate Charge 53nC 125nC
Current - Collector Pulsed (Icm) 60A 160A
Td (on/off) @ 25°C 23ns/140ns 35ns/140ns
Switching Energy 540μJ (on), 1.38mJ (off) 1.5mJ (on), 2.25mJ (off)
REACH SVHC No SVHC No SVHC
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lifecycle Status - ACTIVE (Last Updated: 8 months ago)
Number of Pins - 3
Weight - 38.000013g
Subcategory - Insulated Gate BIP Transistors
Element Configuration - Single
Polarity/Channel Type - N-CHANNEL
Collector Emitter Saturation Voltage - 1.85V
Gate-Emitter Voltage-Max - 20V
Gate-Emitter Thr Voltage-Max - 7V
Lead Free - Lead Free
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