STMicroelectronics STGW15S120DF3

Name: STGW15S120DF3
Brand: STMicroelectronics
SKU: 3587327-STGW15S120DF3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGW15S120DF3

Manufacturer:: STMicroelectronics

Ventron No:: 3587327-STGW15S120DF3

Description:: IGBT 1200V 15A TO247

ECAD Model:

Datasheet:: STGW15S120DF3

Specifications

STMicroelectronics STGW15S120DF3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW15S120DF3.

Factory Lead Time
40 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Max Power Dissipation
259W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGW15
Input Type
Standard
Power - Max
259W
Collector Emitter Voltage (VCEO)
2.05V
Max Collector Current
30A
Reverse Recovery Time
270 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Test Condition
600V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 15A
IGBT Type
Trench Field Stop
Gate Charge
53nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
23ns/140ns
Switching Energy
540μJ (on), 1.38mJ (off)
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

STGW15S120DF3 Description
STGW15S120DF3, part of the S series of 1200 V IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It is specifically designed to achieve maximal efficiency in low-frequency industrial systems. Due to its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be achieved.

STGW15S120DF3 Features
Available in the TO-247-3 package Tight parameter distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode

STGW15S120DF3 Applications
Industrial drives UPS Solar Welding

STGW15S120DF3 More Descriptions

Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3 Tab) TO-247 Tube
Trench gate field-stop IGBT, S series 1200 V, 15 A low drop
IGBT, SINGLE, 1.2KV, 30A, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 259W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of

Product Comparison

The three parts on the right have similar specifications to STGW15S120DF3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Input Type

Power - Max

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

REACH SVHC

RoHS Status

Element Configuration

Power Dissipation

Collector Emitter Saturation Voltage

Radiation Hardening

Lifecycle Status

Number of Pins

Weight

Subcategory

Polarity/Channel Type

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Lead Free

Transistor Element Material

Series

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Voltage - Rated DC

Current Rating

Pin Count

Number of Elements

Turn On Delay Time

Transistor Application

Rise Time

Drain to Source Voltage (Vdss)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Input Capacitance

Turn On Time

Continuous Collector Current

Turn Off Time-Nom (toff)

Height

Length

Width

View Compare
STGW15S120DF3

STMicroelectronics

40 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~175°C TJ

Tube

Active

Not Applicable

EAR99

259W

NOT SPECIFIED

NOT SPECIFIED

STGW15

Standard

259W

2.05V

30A

270 ns

1.2kV

1200V

600V, 15A, 22 Ω, 15V

2.05V @ 15V, 15A

Trench Field Stop

53nC

60A

23ns/140ns

540μJ (on), 1.38mJ (off)

No SVHC

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGW30H60DF

STMicroelectronics

-

Through Hole

Through Hole

TO-247-3

-40°C~175°C TJ

Tube

Obsolete

Not Applicable

EAR99

260W

-

-

STGW30

Standard

-

600V

60A

110 ns

600V

-

400V, 30A, 10 Ω, 15V

2.4V @ 15V, 30A

Trench Field Stop

105nC

120A

50ns/160ns

350μJ (on), 400μJ (off)

-

ROHS3 Compliant

Single

260W

2.4V

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGW15S120DF3 vs STGW30H60DF
STGW40M120DF3

STMicroelectronics

30 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

EAR99

468W

NOT SPECIFIED

NOT SPECIFIED

STGW40

Standard

468W

1.2kV

80A

355 ns

1.2kV

1200V

600V, 40A, 10 Ω, 15V

2.3V @ 15V, 40A

Trench Field Stop

125nC

160A

35ns/140ns

1.5mJ (on), 2.25mJ (off)

No SVHC

ROHS3 Compliant

Single

-

1.85V

-

ACTIVE (Last Updated: 8 months ago)

3

38.000013g

Insulated Gate BIP Transistors

N-CHANNEL

20V

7V

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGW15S120DF3 vs STGW40M120DF3
STGW40NC60WD

STMicroelectronics

-

Through Hole

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

EAR99

250W

-

-

STGW40

Standard

-

600V

70A

45 ns

600V

-

390V, 30A, 10 Ω, 15V

2.5V @ 15V, 30A

-

126nC

230A

33ns/168ns

302μJ (on), 349μJ (off)

No SVHC

ROHS3 Compliant

Single

250W

2.1V

No

-

3

38.000013g

Insulated Gate BIP Transistors

N-CHANNEL

20V

5.75V

Lead Free

SILICON

PowerMESH™

e3

yes

3

Tin (Sn)

600V

40A

3

1

33 ns

POWER CONTROL

12ns

650V

168 ns

40A

TO-247AC

2.9nF

46 ns

40A

280 ns

20.15mm

15.75mm

5.15mm

STGW15S120DF3 vs STGW40NC60WD