STMicroelectronics 2STR2230
- Part Number:
- 2STR2230
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3585278-2STR2230
- Description:
- TRANS PNP 30V 1.5A SOT-23
- Datasheet:
- 2STR2230
STMicroelectronics 2STR2230 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2STR2230.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1.5A
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part Number2STR
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce170 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic800mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage-30V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-420mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- hFE Min70
- Height950μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2STR2230 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 170 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -420mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2STR2230 Features
the DC current gain for this device is 170 @ 500mA 2V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 100MHz
2STR2230 Applications
There are a lot of STMicroelectronics
2STR2230 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 170 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -420mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2STR2230 Features
the DC current gain for this device is 170 @ 500mA 2V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 100MHz
2STR2230 Applications
There are a lot of STMicroelectronics
2STR2230 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2STR2230 More Descriptions
Trans GP BJT PNP 30V 1.5A 500mW 3-Pin SOT-23 T/R
Low voltage fast-switching PNP power transistor
Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Power Bipolar, PNP, 2V, 100mA, SOT-23, Tape and ReelSTMicroelectronics SCT
POWER BJT, PNP, -30V, -1.5A, SOT-23 - More Details
Transistor, BJT, PNP, -30V, -1.5A, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:100MHz; Power
Power Bjt, Pnp, -30V, -1.5A, Sot-23; Collector Current @ Hfe:-0.5A; Collector Emitter Voltage V(Br)Ceo:-30V; Dc Collector Current:-1.5A; Dc Current Gain Min (Hfe):170; Dc Current Gain Hfe:560; No. Of Pins:3; Package/Case:3-Sot-23 Rohs Compliant: Yes |Stmicroelectronics 2STR2230
TRANSISTOR, BJT, PNP, -30V, -1.5A, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 500mW; DC Collector Current: -1.5A; DC Current Gain hFE: 560hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -65°C
Low voltage fast-switching PNP power transistor
Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Power Bipolar, PNP, 2V, 100mA, SOT-23, Tape and ReelSTMicroelectronics SCT
POWER BJT, PNP, -30V, -1.5A, SOT-23 - More Details
Transistor, BJT, PNP, -30V, -1.5A, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:100MHz; Power
Power Bjt, Pnp, -30V, -1.5A, Sot-23; Collector Current @ Hfe:-0.5A; Collector Emitter Voltage V(Br)Ceo:-30V; Dc Collector Current:-1.5A; Dc Current Gain Min (Hfe):170; Dc Current Gain Hfe:560; No. Of Pins:3; Package/Case:3-Sot-23 Rohs Compliant: Yes |Stmicroelectronics 2STR2230
TRANSISTOR, BJT, PNP, -30V, -1.5A, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 500mW; DC Collector Current: -1.5A; DC Current Gain hFE: 560hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -65°C
The three parts on the right have similar specifications to 2STR2230.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingTerminationQualification StatusSaturation CurrentView Compare
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2STR2230ACTIVE (Last Updated: 8 months ago)8 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-65°C~150°C TJTape & Reel (TR)e3Active1 (Unlimited)3EAR99MATTE TINOther Transistors-30V500mWDUALGULL WING260-1.5A100MHz302STR31Single500mWSWITCHING100MHzPNPPNP30V1.5A170 @ 500mA 2V100nA ICBO800mV @ 200mA, 2A-30V100MHz-420mV30V30V5V70950μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free-----
-
-8 Weeks------Tape & Reel (TR)-Active1 (Unlimited)--------------------------------------ROHS3 Compliant-----
-
-8 Weeks------Tape & Reel (TR)-Active1 (Unlimited)--------------------------------------ROHS3 Compliant-----
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)3EAR99-Other Transistors-500mWDUALGULL WING225--NOT SPECIFIED2STR31Single500mWSWITCHING-PNPPNP15V1.5A200 @ 500mA 2V100nA ICBO850mV @ 200mA, 2A15V100MHz850mV15V15V5V200950μm2.9mm1.3mmNo SVHC-ROHS3 CompliantLead FreeTinSMD/SMTNot Qualified1A
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