STMicroelectronics 2STN1360
- Part Number:
- 2STN1360
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3585040-2STN1360
- Description:
- TRANS NPN 60V 3A SOT-223
- Datasheet:
- 2STN1360
STMicroelectronics 2STN1360 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2STN1360.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation1.6W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Frequency130MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part Number2STN
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.6W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product130MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 1A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 150mA, 3A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency130MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)6V
- hFE Min80
- Height1.8mm
- Length6.5mm
- Width3.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2STN1360 Overview
This device has a DC current gain of 160 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 130MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 3A volts.
2STN1360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 130MHz
2STN1360 Applications
There are a lot of STMicroelectronics
2STN1360 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 160 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 130MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 3A volts.
2STN1360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 130MHz
2STN1360 Applications
There are a lot of STMicroelectronics
2STN1360 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2STN1360 More Descriptions
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
2STN1360 Series NPN 60 V 3 A 1.6 W Switching Transistor - SOT-223
Trans GP BJT NPN 60V 3A 1600mW 4-Pin(3 Tab) SOT-223 T/R
Power Bipolar, NPN, 2V, 150mA, SOT-223, Tape and ReelSTMicroelectronics SCT
60V 1.6W 3A 160@1A2V 130MHz 180mV@3A150mA NPN 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Transistor, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:130MHz; Power Dissipation Pd:1.6W;
Power Bjt, Npn, 60V, 3A, Sot-223, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:3A; Power Dissipation:1.6W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Stmicroelectronics 2STN1360
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 3 / Collector-Emitter Voltage (Vceo) V = 60 / DC Current Gain (hFE) = 400 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 130 / Power Dissipation (Pd) W = 1.6 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.2
TRANSISTOR, NPN, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.6W; DC Collector Current: 3A; DC Current Gain hFE: 280hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 300mV; Continuous Collector Current Ic Max: 3A; Current Ic Continuous a Max: 3A; Current Ic Hfe NPN Device: 1A; Current Ic hFE: 1A; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 160; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 1.6W; Termination Type: Surface Mount Device; Voltage Vcbo: 80V
2STN1360 Series NPN 60 V 3 A 1.6 W Switching Transistor - SOT-223
Trans GP BJT NPN 60V 3A 1600mW 4-Pin(3 Tab) SOT-223 T/R
Power Bipolar, NPN, 2V, 150mA, SOT-223, Tape and ReelSTMicroelectronics SCT
60V 1.6W 3A 160@1A2V 130MHz 180mV@3A150mA NPN 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Transistor, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:130MHz; Power Dissipation Pd:1.6W;
Power Bjt, Npn, 60V, 3A, Sot-223, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:3A; Power Dissipation:1.6W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Stmicroelectronics 2STN1360
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 3 / Collector-Emitter Voltage (Vceo) V = 60 / DC Current Gain (hFE) = 400 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 130 / Power Dissipation (Pd) W = 1.6 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.2
TRANSISTOR, NPN, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.6W; DC Collector Current: 3A; DC Current Gain hFE: 280hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 300mV; Continuous Collector Current Ic Max: 3A; Current Ic Continuous a Max: 3A; Current Ic Hfe NPN Device: 1A; Current Ic hFE: 1A; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 160; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 1.6W; Termination Type: Surface Mount Device; Voltage Vcbo: 80V
The three parts on the right have similar specifications to 2STN1360.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishQualification StatusPbfree CodeView Compare
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2STN1360ACTIVE (Last Updated: 8 months ago)8 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA3SILICON150°C TJTape & Reel (TR)e3Active1 (Unlimited)4EAR99Other Transistors80V1.6WDUALGULL WING2603A130MHz302STN4R-PDSO-G41Single1.6WCOLLECTORSWITCHING130MHzNPNNPN60V3A160 @ 1A 2V100nA ICBO500mV @ 150mA, 3A60V130MHz500mV60V80V6V801.8mm6.5mm3.5mmNo SVHCNoROHS3 CompliantLead Free----
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---Surface MountSurface MountTO-261-4, TO-261AA4SILICON150°C TJTape & Reel (TR)e3Obsolete3 (168 Hours)4EAR99Other Transistors-1.6WDUALGULL WING260--302STN4-1Single1.6WCOLLECTORSWITCHING-PNPPNP40V5A150 @ 2A 2V100nA ICBO450mV @ 500mA, 5A40V---40V6V------ROHS3 Compliant-MATTE TINNot Qualified-
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--TinSurface MountSurface MountTO-261-4, TO-261AA4SILICON150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)4EAR99Other Transistors-1.6WDUALGULL WING260-130MHz302STN3-1Single1.6WCOLLECTORSWITCHING130MHzPNPPNP60V3A160 @ 1A 2V100nA ICBO500mV @ 150mA, 3A60V130MHz500mV60V60V6V801.8mm6.5mm3.5mm-NoROHS3 CompliantLead Free--yes
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ACTIVE (Last Updated: 8 months ago)8 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA-SILICON150°C TJTape & Reel (TR)e3Active1 (Unlimited)4EAR99Other Transistors-1.6WDUALGULL WING260--302STN4R-PDSO-G41Single1.6WCOLLECTORSWITCHING-NPNNPN50V5A135 @ 2A 2V100nA ICBO450mV @ 300mA, 3A50V--50V50V5V-----NoROHS3 CompliantLead Free---
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