Rohm Semiconductor 2SD2657KT146

2SD2657KT146 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 160mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.Continuous collector voltages of 1.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 330MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.

2SD2657KT146 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 330MHz


2SD2657KT146 Applications
There are a lot of ROHM Semiconductor
2SD2657KT146 applications of single BJT transistors.


Inverter
Interface
Driver
Muting