Panasonic Electronic Components 2SD2185GRL
- Part Number:
- 2SD2185GRL
- Manufacturer:
- Panasonic Electronic Components
- Ventron No:
- 3585651-2SD2185GRL
- Description:
- TRANS NPN 50V 3A MINI-PWR
- ECAD Model:
-
- Datasheet:
- 2SD2185G Datasheet
Panasonic Electronic Components 2SD2185GRL technical specifications, attributes, parameters and parts with similar specifications to Panasonic Electronic Components 2SD2185GRL.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Supplier Device PackageMiniP3-F2
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation1W
- Base Part Number2SD2185
- Power - Max1W
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 200mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 1A
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)3A
- Max Breakdown Voltage50V
- Frequency - Transition120MHz
- RoHS StatusRoHS Compliant
2SD2185GRL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 200mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 1A.Single BJT transistor can take a breakdown input voltage of 50V volts.MiniP3-F2 is the supplier device package for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 3A volts.
2SD2185GRL Features
the DC current gain for this device is 120 @ 200mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
the supplier device package of MiniP3-F2
2SD2185GRL Applications
There are a lot of Panasonic Electronic Components
2SD2185GRL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 200mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 1A.Single BJT transistor can take a breakdown input voltage of 50V volts.MiniP3-F2 is the supplier device package for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 3A volts.
2SD2185GRL Features
the DC current gain for this device is 120 @ 200mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
the supplier device package of MiniP3-F2
2SD2185GRL Applications
There are a lot of Panasonic Electronic Components
2SD2185GRL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD2185GRL More Descriptions
TRANS NPN 50V 3A MINI-PWR
The three parts on the right have similar specifications to 2SD2185GRL.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationBase Part NumberPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageFrequency - TransitionRoHS StatusTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinLead FreeContact PlatingNumber of PinsAdditional FeaturePolarityPower DissipationContinuous Collector CurrentRadiation HardeningTerminal PositionConfigurationJEDEC-95 CodeView Compare
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2SD2185GRLSurface MountSurface MountTO-243AAMiniP3-F2150°C TJTape & Reel (TR)2007Obsolete1 (Unlimited)1W2SD21851WNPN300mV3A120 @ 200mA 2V100nA ICBO300mV @ 50mA, 1A50V50V3A50V120MHzRoHS Compliant--------------------------------------- -
Surface MountSurface MountTO-243AA-150°C TJTape & Reel (TR)2002Active1 (Unlimited)2W--NPN1V2A82 @ 500mA 3V1μA ICBO1V @ 200mA, 2A31V----ROHS3 CompliantSILICONe2yes3EAR99Tin/Copper (Sn/Cu)8541.21.00.95Other Transistors31VFLAT260not_compliant2A103R-PSSO-F3Not Qualified1SingleCOLLECTORSWITCHING100MHzNPN100MHz35V5V82Lead Free----------
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Surface MountSurface MountTO-243AA-150°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)2W2SD2170-NPN - Darlington110V2A1000 @ 1A 2V10μA ICBO1.5V @ 1mA, 1A90V--90V-ROHS3 CompliantSILICONe2yes3EAR99TIN COPPER-Other Transistors90VFLAT260-2A103R-PSSO-F3-1SingleCOLLECTORSWITCHING80MHz-80MHz110V6V1000Lead FreeCopper, Tin4BUILT-IN BIAS RESISTORNPN500mW2ANo---
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Through HoleThrough HoleTO-220-3 Full Pack-150°C TJBulk2004Obsolete1 (Unlimited)2W--NPN300mV5A500 @ 1A 4V100μA ICBO300mV @ 100mA, 4A60V--60V30MHzRoHS CompliantSILICONe6no3EAR99Tin/Bismuth (Sn/Bi)8541.29.00.95-60V-260unknown5A10-R-PSFM-T3Not Qualified1-ISOLATEDAMPLIFIER-NPN30MHz-----------SINGLESINGLETO-220AB
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