Rohm Semiconductor 2SD1949T106R
- Part Number:
- 2SD1949T106R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2845885-2SD1949T106R
- Description:
- TRANS NPN 50V 0.5A SOT-323
- Datasheet:
- 2SD1949T106R
Rohm Semiconductor 2SD1949T106R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD1949T106R.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SD1949
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product250MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 10mA 3V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
- Collector Emitter Breakdown Voltage50V
- Max Frequency100MHz
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min120
- Continuous Collector Current500mA
- Height900μm
- Length2mm
- Width1.25mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SD1949T106R Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 10mA 3V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
2SD1949T106R Features
the DC current gain for this device is 180 @ 10mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz
2SD1949T106R Applications
There are a lot of ROHM Semiconductor
2SD1949T106R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 10mA 3V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
2SD1949T106R Features
the DC current gain for this device is 180 @ 10mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz
2SD1949T106R Applications
There are a lot of ROHM Semiconductor
2SD1949T106R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD1949T106R More Descriptions
ROHM 2SD1949T106R NPN Bipolar Transistor, 0.5 A, 50 V, 3-Pin SC-70 | ROHM Semiconductor 2SD1949T106R
Trans GP BJT NPN 50V 0.5A 200mW 3-Pin UMT T/R
NPN TRANSISTOR 50V 0,5A HFE180- RoHSconf
TRANSISTOR,NPN,50V,0.5A,SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 200mW; DC Collector Current: 500mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 250MHz
Trans GP BJT NPN 50V 0.5A 200mW 3-Pin UMT T/R
NPN TRANSISTOR 50V 0,5A HFE180- RoHSconf
TRANSISTOR,NPN,50V,0.5A,SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 200mW; DC Collector Current: 500mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 250MHz
The three parts on the right have similar specifications to 2SD1949T106R.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-30 CodeQualification StatusCurrent - Collector (Ic) (Max)Lifecycle StatusPower - MaxFrequency - TransitionView Compare
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2SD1949T106R13 WeeksCopper, Silver, TinSurface MountSurface MountSC-70, SOT-3233SILICON150°C TJTape & Reel (TR)2008e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other Transistors50V200mWDUALGULL WING260500mA102SD194931SingleSWITCHING250MHzNPNNPN50V500mA180 @ 10mA 3V500nA ICBO400mV @ 15mA, 150mA50V100MHz250MHz400mV50V50V5V120500mA900μm2mm1.25mmNo SVHCNoROHS3 CompliantLead Free-------
-
--Through HoleThrough Hole3-SIP-SILICON150°C TJTape & Box (TB)2006e1-Obsolete1 (Unlimited)3EAR99TIN SILVER COPPER8541.29.00.75Other Transistors120V1W--2601.5A102SD185731SingleSWITCHING80MHzNPNNPN2V2A120 @ 100mA 5V1μA ICBO2V @ 100mA, 1A120V-80MHz--120V5V120------ROHS3 CompliantLead FreeR-PSIP-T3Not Qualified2A---
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--Through HoleThrough Hole3-SIP-SILICON150°C TJTape & Box (TB)2006e1-Obsolete1 (Unlimited)3EAR99TIN SILVER COPPER8541.29.00.75Other Transistors120V1W--2601.5A102SD185731SingleSWITCHING80MHzNPNNPN2V2A82 @ 100mA 5V1μA ICBO2V @ 100mA, 1A120V-80MHz--120V5V82------ROHS3 CompliantLead FreeR-PSIP-T3Not Qualified2A---
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9 Weeks-Through HoleThrough HoleTO-220-3--150°C TJTube2005--Active1 (Unlimited)------1.75W------------NPN300mV5A140 @ 1A 2V100μA ICBO300mV @ 300mA, 3A50V----60V6V-------ROHS3 CompliantLead Free---ACTIVE (Last Updated: 3 days ago)1.75W30MHz
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