Sanken 2SD1796 technical specifications, attributes, parameters and parts with similar specifications to Sanken 2SD1796.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2001
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureBUILT-IN BIAS RESISTOR
- SubcategoryOther Transistors
- Max Power Dissipation25W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Case ConnectionISOLATED
- Power - Max25W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)1.5V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 3A 4V
- Current - Collector Cutoff (Max)10μA ICBO
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 10mA, 3A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency60MHz
- Frequency - Transition60MHz
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
2SD1796 Overview
This device has a DC current gain of 2000 @ 3A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 60MHz.The maximum collector current is 4A volts.
2SD1796 Features
the DC current gain for this device is 2000 @ 3A 4V
the vce saturation(Max) is 1.5V @ 10mA, 3A
a transition frequency of 60MHz
2SD1796 Applications
There are a lot of Sanken
2SD1796 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 2000 @ 3A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 60MHz.The maximum collector current is 4A volts.
2SD1796 Features
the DC current gain for this device is 2000 @ 3A 4V
the vce saturation(Max) is 1.5V @ 10mA, 3A
a transition frequency of 60MHz
2SD1796 Applications
There are a lot of Sanken
2SD1796 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD1796 More Descriptions
Trans Darlington NPN 70V 4A 25000mW Automotive 3-Pin(3 Tab) TO-220F
TRANS NPN DARL 60V 4A TO220F
French Electronic Distributor since 1988
TRANS NPN DARL 60V 4A TO220F
French Electronic Distributor since 1988
The three parts on the right have similar specifications to 2SD1796.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionRoHS StatusLead FreeJESD-609 CodeTerminal FinishHTS CodeVoltage - Rated DCCurrent RatingBase Part NumberElement ConfigurationGain Bandwidth ProductCurrent - Collector (Ic) (Max)Collector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Lifecycle StatusView Compare
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2SD179612 WeeksThrough HoleThrough HoleTO-220-3 Full PackSILICON150°C TJBulk2001yesActive1 (Unlimited)3EAR99BUILT-IN BIAS RESISTOROther Transistors25WSINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3Not Qualified1DARLINGTON WITH BUILT-IN DIODE AND RESISTORISOLATED25WSWITCHINGNPNNPN - Darlington1.5V4A2000 @ 3A 4V10μA ICBOTO-220AB1.5V @ 10mA, 3A60V60MHz60MHzRoHS CompliantLead Free----------------
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-Through HoleThrough Hole3-SIPSILICON150°C TJTape & Box (TB)2006-Obsolete1 (Unlimited)3EAR99-Other Transistors1W-260-103R-PSIP-T3Not Qualified1---SWITCHINGNPNNPN2V2A120 @ 100mA 5V1μA ICBO-2V @ 100mA, 1A120V80MHz-ROHS3 CompliantLead Freee1TIN SILVER COPPER8541.29.00.75120V1.5A2SD1857Single80MHz2A120V5V120---
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--Through HoleTO-251-3 Short Leads, IPak, TO-251AA-150°C TJBulk--Obsolete1 (Unlimited)---------------1W--NPN--200 @ 500mA 5V1μA ICBO-400mV @ 200mA, 2A--180MHzROHS3 Compliant---------4A---TP100V-
-
9 WeeksThrough HoleThrough HoleTO-220-3-150°C TJTube2005-Active1 (Unlimited)----1.75W----------1.75W--NPN300mV5A140 @ 1A 2V100μA ICBO-300mV @ 300mA, 3A50V-30MHzROHS3 CompliantLead Free---------60V6V---ACTIVE (Last Updated: 3 days ago)
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