Rohm Semiconductor 2SD1781KT146Q
- Part Number:
- 2SD1781KT146Q
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3068959-2SD1781KT146Q
- Description:
- TRANS NPN 32V 0.8A SOT-346
- Datasheet:
- 2SD1781KT146Q
Rohm Semiconductor 2SD1781KT146Q technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD1781KT146Q.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC32V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating800mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SD1781
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)32V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA 3V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage32V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage100mV
- Max Breakdown Voltage32V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min120
- Continuous Collector Current800mA
- VCEsat-Max0.4 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SD1781KT146Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 100mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 800mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
2SD1781KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 150MHz
2SD1781KT146Q Applications
There are a lot of ROHM Semiconductor
2SD1781KT146Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 100mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 800mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
2SD1781KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 150MHz
2SD1781KT146Q Applications
There are a lot of ROHM Semiconductor
2SD1781KT146Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD1781KT146Q More Descriptions
Bipolar Transistors - BJT NPN 32V 0.8A
Trans GP BJT NPN 32V 0.8A 3-Pin SMT T/R
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:32V; Dc Collector Current:800Ma; Power Dissipation Pd:200Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:150Mhz; Dc Current Gain Hfe:120Hferohs Compliant: Yes
Trans GP BJT NPN 32V 0.8A 3-Pin SMT T/R
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:32V; Dc Collector Current:800Ma; Power Dissipation Pd:200Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:150Mhz; Dc Current Gain Hfe:120Hferohs Compliant: Yes
The three parts on the right have similar specifications to 2SD1781KT146Q.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusSurface MountConfigurationCurrent - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)JESD-30 CodeQualification StatusView Compare
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2SD1781KT146Q13 WeeksCopper, Silver, TinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)1998e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other Transistors32V200mWDUALGULL WING260800mA102SD178131SingleAMPLIFIER150MHzNPNNPN32V800mA120 @ 100mA 3V500nA ICBO400mV @ 50mA, 500mA32V150MHz100mV32V40V5V120800mA0.4 VNo SVHCNoROHS3 CompliantLead Free-----------
-
2 Weeks--Through HoleTO-251-3 Short Leads, IPak, TO-251AA3-150°C TJBulk2012e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)-Other Transistors-1W--NOT SPECIFIED-NOT SPECIFIED2SD18023----NPNNPN50V5A140 @ 100mA 2V1μA ICBO500mV @ 100mA, 2A50V--50V60V6V100----ROHS3 CompliantLead FreeACTIVE (Last Updated: 3 days ago)NOSingle3A150MHz-----
-
---Through HoleTO-251-3 Short Leads, IPak, TO-251AA--150°C TJBulk---Obsolete1 (Unlimited)-------------------NPN--200 @ 500mA 5V1μA ICBO400mV @ 200mA, 2A-----------ROHS3 Compliant----4A180MHzTP1W100V--
-
--Through HoleThrough Hole3-SIP-SILICON150°C TJTape & Box (TB)2006e1-Obsolete1 (Unlimited)3EAR99TIN SILVER COPPER8541.29.00.75Other Transistors120V1W--2601.5A102SD185731SingleSWITCHING80MHzNPNNPN2V2A82 @ 100mA 5V1μA ICBO2V @ 100mA, 1A120V80MHz--120V5V82----ROHS3 CompliantLead Free---2A----R-PSIP-T3Not Qualified
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