ON Semiconductor 2SD1623T-TD-E
- Part Number:
- 2SD1623T-TD-E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585243-2SD1623T-TD-E
- Description:
- TRANS NPN 50V 2A SOT89-3
- ECAD Model:
-
- Datasheet:
- 2SD1623T-TD-E
ON Semiconductor 2SD1623T-TD-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SD1623T-TD-E.
- Lifecycle StatusACTIVE (Last Updated: 18 hours ago)
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Bismuth (Sn/Bi)
- Max Power Dissipation500mW
- Terminal FormFLAT
- Reach Compliance Codenot_compliant
- Frequency150MHz
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 1A
- Collector Emitter Breakdown Voltage50V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage150mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min200
- Turn Off Time-Max (toff)580ns
- Turn On Time-Max (ton)60ns
- Height1.5mm
- Length4.5mm
- Width2.5mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SD1623T-TD-E Overview
This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 400mV @ 50mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 2A volts is possible.
2SD1623T-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1623T-TD-E Applications
There are a lot of ON Semiconductor
2SD1623T-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 400mV @ 50mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 2A volts is possible.
2SD1623T-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1623T-TD-E Applications
There are a lot of ON Semiconductor
2SD1623T-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD1623T-TD-E More Descriptions
Bipolar Transistor, 50V, 2A, Low VCE(sat), (PNP)NPN Single PCP hFE 200-400
50V 500mW 2A 150MHz 150mV@1A50mA NPN 150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans GP BJT NPN 50V 2A 4-Pin(3 Tab) PCP T/R - Tape and Reel
ON Semi 2SD1623T-TD-E NPN Bipolar Transistor, 2 A, 50 V, 3-Pin PCP | ON Semiconductor 2SD1623T-TD-E
2SD1623 Series 50 V 2 A 500 mW Surface Mount Bipolar Transistor - PCP
Bip TR 50 V 2A VCE(sat);0.4V max. NPN Single PCP, h FE 200-400
TRANSISTOR, NPN, 50V, 2A, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Typ Gain Bandwidth ft:150MHz; Power Dissipation Pd:1.3W; DC Collector Current:2A; DC Current Gain hFE:400; Transistor Case Style:SOT-89; No. of Pins:3
50V 500mW 2A 150MHz 150mV@1A50mA NPN 150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans GP BJT NPN 50V 2A 4-Pin(3 Tab) PCP T/R - Tape and Reel
ON Semi 2SD1623T-TD-E NPN Bipolar Transistor, 2 A, 50 V, 3-Pin PCP | ON Semiconductor 2SD1623T-TD-E
2SD1623 Series 50 V 2 A 500 mW Surface Mount Bipolar Transistor - PCP
Bip TR 50 V 2A VCE(sat);0.4V max. NPN Single PCP, h FE 200-400
TRANSISTOR, NPN, 50V, 2A, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Typ Gain Bandwidth ft:150MHz; Power Dissipation Pd:1.3W; DC Collector Current:2A; DC Current Gain hFE:400; Transistor Case Style:SOT-89; No. of Pins:3
The three parts on the right have similar specifications to 2SD1623T-TD-E.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal FormReach Compliance CodeFrequencyPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)Turn On Time-Max (ton)HeightLengthWidthRoHS StatusLead FreeMountHTS CodeSubcategoryVoltage - Rated DCPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusCurrent - Collector (Ic) (Max)Supplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
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2SD1623T-TD-EACTIVE (Last Updated: 18 hours ago)14 WeeksSurface MountTO-243AAYES3SILICON150°C TJTape & Reel (TR)2011e6yesActive1 (Unlimited)3EAR99Tin/Bismuth (Sn/Bi)500mWFLATnot_compliant150MHz31Single500mWCOLLECTORSWITCHING150MHzNPNNPN50V2A100 @ 100mA 2V100nA ICBO400mV @ 50mA, 1A50V150MHz150mV50V60V6V200580ns60ns1.5mm4.5mm2.5mmROHS3 CompliantLead Free---------------- -
--Through Hole3-SIP--SILICON150°C TJTape & Box (TB)2006e1-Obsolete1 (Unlimited)3EAR99TIN SILVER COPPER1W---31Single--SWITCHING80MHzNPNNPN2V2A180 @ 100mA 5V1μA ICBO2V @ 100mA, 1A120V80MHz--120V5V180-----ROHS3 CompliantLead FreeThrough Hole8541.29.00.75Other Transistors120V2601.5A102SD1857R-PSIP-T3Not Qualified2A----
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--Through HoleTO-251-3 Short Leads, IPak, TO-251AA---150°C TJBulk---Obsolete1 (Unlimited)---------------NPN--200 @ 500mA 5V1μA ICBO400mV @ 200mA, 2A------------ROHS3 Compliant-----------4ATP1W100V180MHz
-
--Through Hole3-SIP--SILICON150°C TJTape & Box (TB)1998e1-Obsolete1 (Unlimited)3EAR99TIN SILVER COPPER1W---31Single--SWITCHING150MHzNPNNPN400mV1A82 @ 100mA 3V500nA ICBO400mV @ 50mA, 500mA32V150MHz--40V5V120-----ROHS3 CompliantLead FreeThrough Hole-Other Transistors32V2601A10-R-PSIP-T3Not Qualified-----
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