Rohm Semiconductor 2SCR523UBTL
- Part Number:
- 2SCR523UBTL
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2463711-2SCR523UBTL
- Description:
- TRANS NPN 50V 0.1A UMT3F
- Datasheet:
- 2SCR523UBTL
Rohm Semiconductor 2SCR523UBTL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SCR523UBTL.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-85
- Number of Pins85
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- JESD-30 CodeR-PDSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Power - Max200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product350MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency350MHz
- Collector Emitter Saturation Voltage100mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min120
- Continuous Collector Current200mA
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SCR523UBTL Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.350MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
2SCR523UBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SCR523UBTL Applications
There are a lot of ROHM Semiconductor
2SCR523UBTL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 120 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.350MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
2SCR523UBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SCR523UBTL Applications
There are a lot of ROHM Semiconductor
2SCR523UBTL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SCR523UBTL More Descriptions
50V 200mW 120@1mA,6V 100mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT Trans NPN GP 50V 0.1A
TRANS, NPN, 50V, 0.1A, 150DEG C, 0.2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Bipolar Transistors - BJT Trans NPN GP 50V 0.1A
TRANS, NPN, 50V, 0.1A, 150DEG C, 0.2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to 2SCR523UBTL.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRadiation HardeningRoHS StatusLead FreeContact PlatingReach Compliance CodeCurrent RatingBase Part NumberQualification StatusConfigurationPower DissipationCase ConnectionMax FrequencyCurrent - Collector (Ic) (Max)View Compare
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2SCR523UBTL13 WeeksSurface MountSurface MountSC-8585SILICON150°C TJTape & Reel (TR)2010e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors200mWDUALFLAT260103R-PDSO-F31Single200mWSWITCHING350MHzNPNNPN50V100mA120 @ 1mA 6V100nA ICBO300mV @ 5mA, 50mA50V350MHz100mV50V50V5V120200mANoROHS3 CompliantLead Free-----------
-
7 WeeksSurface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)2013e2yesNot For New Designs1 (Unlimited)3EAR99TIN COPPEROther Transistors2WSINGLEFLAT260103-1--SWITCHING-NPNNPN80V2.5A120 @ 100mA 3V1μA ICBO300mV @ 50mA, 1A80V280MHz-80V80V6V1202.5A-ROHS3 CompliantLead FreeCopper, Tinnot_compliant2.5A2SCR544Not QualifiedSINGLE2WCOLLECTOR280MHz-
-
-Surface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)2013e2yesNot For New Designs1 (Unlimited)3EAR99TIN COPPEROther Transistors2W-FLAT260103-1Single-SWITCHING360MHzNPNNPN50V1A180 @ 50mA 2V1μA ICBO350mV @ 25mA, 500mA50V360MHz130mV-50V6V180--ROHS3 CompliantLead Free-not_compliant--Not Qualified--COLLECTOR-1A
-
52 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON150°C TJTape & Reel (TR)2013e2yesNot For New Designs1 (Unlimited)2EAR99Tin/Copper (Sn98Cu2)Other Transistors10W-GULL WINGNOT SPECIFIEDNOT SPECIFIED3R-PSSO-G21Single-SWITCHING300MHzNPNNPN350mV4A180 @ 100mA 3V1μA ICBO350mV @ 100mA, 2A50V300MHz130mV-50V6V180--ROHS3 Compliant--not_compliant--Not Qualified----4A
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