Rohm Semiconductor 2SCR523MT2L
- Part Number:
- 2SCR523MT2L
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2464718-2SCR523MT2L
- Description:
- TRANS NPN 50V 0.1A VMT3
- ECAD Model:
-
- Datasheet:
- 2SCR523MT2L
Rohm Semiconductor 2SCR523MT2L technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SCR523MT2L.
- Factory Lead Time13 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-723
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power - Max150mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product350MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency350MHz
- Collector Emitter Saturation Voltage100mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min120
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SCR523MT2L Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 350MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 100mA volts.
2SCR523MT2L Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SCR523MT2L Applications
There are a lot of ROHM Semiconductor
2SCR523MT2L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 350MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 100mA volts.
2SCR523MT2L Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SCR523MT2L Applications
There are a lot of ROHM Semiconductor
2SCR523MT2L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SCR523MT2L More Descriptions
Bipolar Transistors - BJT NPN General Purpose Amplification Transistor
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 50V 0.1A 3-Pin SOT-723 T/R
TRANSISTOR, NPN, 50V, 0.1A, SOT-723; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 50V 0.1A 3-Pin SOT-723 T/R
TRANSISTOR, NPN, 50V, 0.1A, SOT-723; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to 2SCR523MT2L.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeJESD-30 CodeConfigurationFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)Continuous Collector CurrentReach Compliance CodeCase ConnectionView Compare
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2SCR523MT2L13 WeeksTinSurface MountSurface MountSOT-7233SILICON150°C TJTape & Reel (TR)2010e2yesActive1 (Unlimited)3EAR998541.21.00.75Other Transistors150mWDUALFLAT260103Not Qualified1Single150mWSWITCHING350MHzNPNNPN50V100mA120 @ 1mA 6V100nA ICBO300mV @ 5mA, 50mA50V350MHz100mV50V50V5V120ROHS3 CompliantLead Free--------- -
20 Weeks-Surface MountSurface MountSC-9696SILICON150°C TJCut Tape (CT)2013e1yesActive1 (Unlimited)3EAR99-Other Transistors1WDUALGULL WING260103Not Qualified1-1WSWITCHING-NPNNPN300mV700mA120 @ 100mA 3V1μA ICBO300mV @ 15mA, 300mA80V320MHz-80V---ROHS3 CompliantLead FreeR-PDSO-G3SINGLE320MHz750ns50ns---
-
13 WeeksTinSurface MountSurface MountSC-89, SOT-490-SILICON150°C TJTape & Reel (TR)2015e1yesActive1 (Unlimited)3EAR99-Other Transistors150mWDUALFLAT260103Not Qualified1Single-SWITCHING400MHzNPNNPN20V200mA120 @ 1mA 2V100nA ICBO300mV @ 10mA, 100mA20V400MHz120mV20V20V5V120ROHS3 CompliantLead FreeR-PDSO-F3----200mA--
-
13 Weeks-Surface MountSurface MountTO-243AA-SILICON150°C TJTape & Reel (TR)2016--Active1 (Unlimited)3EAR99--500mWSINGLEFLATNOT SPECIFIEDNOT SPECIFIED--1-500mWSWITCHING-NPNNPN300mV700mA120 @ 100mA 3V1μA ICBO300mV @ 15mA, 300mA80V320MHz-80V---ROHS3 Compliant-R-PSSO-F3SINGLE320MHz---not_compliantCOLLECTOR
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