ON Semiconductor 2SC6144
- Part Number:
- 2SC6144
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2469341-2SC6144
- Description:
- TRANS NPN 50V 10A TO-220ML
- Datasheet:
- 2SC6144
ON Semiconductor 2SC6144 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SC6144.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Max Power Dissipation2W
- Terminal PositionSINGLE
- Frequency330MHz
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation2W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)360mV
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 270mA 2V
- Current - Collector Cutoff (Max)10μA ICBO
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic360mV @ 300mA, 6A
- Collector Emitter Breakdown Voltage50V
- Current - Collector (Ic) (Max)10A
- Transition Frequency330MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- RoHS StatusRoHS Compliant
2SC6144 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 270mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 360mV @ 300mA, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 330MHz.During maximum operation, collector current can be as low as 10A volts.
2SC6144 Features
the DC current gain for this device is 200 @ 270mA 2V
the vce saturation(Max) is 360mV @ 300mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 330MHz
2SC6144 Applications
There are a lot of ON Semiconductor
2SC6144 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 270mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 360mV @ 300mA, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 330MHz.During maximum operation, collector current can be as low as 10A volts.
2SC6144 Features
the DC current gain for this device is 200 @ 270mA 2V
the vce saturation(Max) is 360mV @ 300mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 330MHz
2SC6144 Applications
There are a lot of ON Semiconductor
2SC6144 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC6144 More Descriptions
Power Bipolar Transistor, 10A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications | TRANS NPN 50V 10A TO-220ML
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-PowerWDFN Surface Mount MOSFET (Metal Oxide) N-Channel 1m Ω @ 38A, 10V 23A Ta 180A Tc -55°C~150°C TJ FET 25V 1.2 MOHM PC33 SIN
NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications | TRANS NPN 50V 10A TO-220ML
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-PowerWDFN Surface Mount MOSFET (Metal Oxide) N-Channel 1m Ω @ 38A, 10V 23A Ta 180A Tc -55°C~150°C TJ FET 25V 1.2 MOHM PC33 SIN
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