2SC6144

ON Semiconductor 2SC6144

Part Number:
2SC6144
Manufacturer:
ON Semiconductor
Ventron No:
2469341-2SC6144
Description:
TRANS NPN 50V 10A TO-220ML
ECAD Model:
Datasheet:
2SC6144

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Specifications
ON Semiconductor 2SC6144 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SC6144.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • Published
    2008
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
  • Max Power Dissipation
    2W
  • Terminal Position
    SINGLE
  • Frequency
    330MHz
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    2W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    360mV
  • Max Collector Current
    10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 270mA 2V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    360mV @ 300mA, 6A
  • Collector Emitter Breakdown Voltage
    50V
  • Current - Collector (Ic) (Max)
    10A
  • Transition Frequency
    330MHz
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • RoHS Status
    RoHS Compliant
Description
2SC6144 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 270mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 360mV @ 300mA, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 330MHz.During maximum operation, collector current can be as low as 10A volts.

2SC6144 Features
the DC current gain for this device is 200 @ 270mA 2V
the vce saturation(Max) is 360mV @ 300mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 330MHz


2SC6144 Applications
There are a lot of ON Semiconductor
2SC6144 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2SC6144 More Descriptions
Power Bipolar Transistor, 10A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications | TRANS NPN 50V 10A TO-220ML
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-PowerWDFN Surface Mount MOSFET (Metal Oxide) N-Channel 1m Ω @ 38A, 10V 23A Ta 180A Tc -55°C~150°C TJ FET 25V 1.2 MOHM PC33 SIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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