ON Semiconductor 2SC5706-TL-H
- Part Number:
- 2SC5706-TL-H
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585130-2SC5706-TL-H
- Description:
- TRANS NPN 50V 5A TP-FA
- Datasheet:
- 2SC5706-TL-H
ON Semiconductor 2SC5706-TL-H technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SC5706-TL-H.
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 1 week ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Power Dissipation800mW
- Terminal FormGULL WING
- Frequency400MHz
- Base Part Number2SC5706
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation800mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product400MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA 2V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic240mV @ 100mA, 2A
- Collector Emitter Breakdown Voltage50V
- Transition Frequency400MHz
- Collector Emitter Saturation Voltage160mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)6V
- hFE Min200
- Height2.3mm
- Length6.5mm
- Width5.5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC5706-TL-H Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 160mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 240mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.400MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
2SC5706-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SC5706-TL-H Applications
There are a lot of ON Semiconductor
2SC5706-TL-H applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 160mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 240mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.400MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
2SC5706-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SC5706-TL-H Applications
There are a lot of ON Semiconductor
2SC5706-TL-H applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC5706-TL-H More Descriptions
Bipolar Transistor, 50V, 5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Surface Mount 2-TP-FA
Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-252
ON Semi 2SC5706-TL-H NPN Bipolar Transistor, 5 A, 50 V, 4-Pin TP-FA | ON Semiconductor 2SC5706-TL-H
Trans GP BJT NPN 50V 5A 3-Pin(2 Tab) TP-FA T/R - Tape and Reel
TRANSISTOR, NPN, 50V, 5A, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 400MHz; Power Dissipation Pd: 15W; DC Collector Current: 5A; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Surface Mount 2-TP-FA
Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-252
ON Semi 2SC5706-TL-H NPN Bipolar Transistor, 5 A, 50 V, 4-Pin TP-FA | ON Semiconductor 2SC5706-TL-H
Trans GP BJT NPN 50V 5A 3-Pin(2 Tab) TP-FA T/R - Tape and Reel
TRANSISTOR, NPN, 50V, 5A, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 400MHz; Power Dissipation Pd: 15W; DC Collector Current: 5A; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
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