2SC5706-TL-H

ON Semiconductor 2SC5706-TL-H

Part Number:
2SC5706-TL-H
Manufacturer:
ON Semiconductor
Ventron No:
3585130-2SC5706-TL-H
Description:
TRANS NPN 50V 5A TP-FA
ECAD Model:
Datasheet:
2SC5706-TL-H

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Specifications
ON Semiconductor 2SC5706-TL-H technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SC5706-TL-H.
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 1 week ago)
  • Factory Lead Time
    2 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e6
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Power Dissipation
    800mW
  • Terminal Form
    GULL WING
  • Frequency
    400MHz
  • Base Part Number
    2SC5706
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    800mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    400MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    1μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    240mV @ 100mA, 2A
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    400MHz
  • Collector Emitter Saturation Voltage
    160mV
  • Max Breakdown Voltage
    50V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    200
  • Height
    2.3mm
  • Length
    6.5mm
  • Width
    5.5mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2SC5706-TL-H Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 160mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 240mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.400MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.

2SC5706-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz


2SC5706-TL-H Applications
There are a lot of ON Semiconductor
2SC5706-TL-H applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2SC5706-TL-H More Descriptions
Bipolar Transistor, 50V, 5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Surface Mount 2-TP-FA
Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-252
ON Semi 2SC5706-TL-H NPN Bipolar Transistor, 5 A, 50 V, 4-Pin TP-FA | ON Semiconductor 2SC5706-TL-H
Trans GP BJT NPN 50V 5A 3-Pin(2 Tab) TP-FA T/R - Tape and Reel
TRANSISTOR, NPN, 50V, 5A, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 400MHz; Power Dissipation Pd: 15W; DC Collector Current: 5A; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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