ON Semiconductor 2SC5706-E

Name: 2SC5706-E
Brand: ON Semiconductor
SKU: 3585304-2SC5706-E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SC5706-E

Manufacturer:: ON Semiconductor

Ventron No:: 3585304-2SC5706-E

Description:: TRANS NPN 50V 5A TP

ECAD Model:

Datasheet:: 2SC5706-E

Specifications

ON Semiconductor 2SC5706-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SC5706-E.

Lifecycle Status
ACTIVE (Last Updated: 6 hours ago)
Factory Lead Time
2 Weeks
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
HTS Code
8541.21.00.75
Max Power Dissipation
800mW
Base Part Number
2SC5706
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
400MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
240mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
5A
Transition Frequency
400MHz
Collector Emitter Saturation Voltage
160mV
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
6V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2SC5706-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 160mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 400MHz.The maximum collector current is 5A volts.

2SC5706-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz

2SC5706-E Applications
There are a lot of ON Semiconductor
2SC5706-E applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2SC5706-E More Descriptions

Bipolar Transistor, 50V, 5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-251
2SC5706E: NPN 50 V 5 A 400 MHz 800 mW Through Hole Bipolar (BJT) Transistor - TP
50V 800mW 5A NPN TO-251-3 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 50V 5A 800mW 3-Pin(3 Tab) IPAK Bag
Bipolar Transistors - BJT BIP NPN 5A 50V
BIPOLAR TRANSISTOR, NPN, 50V, TO-251-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 400MHz; Power Dissipation Pd: 15W; DC Collector Curren; Available until stocks are exhausted
Bipolar Transistor, Npn, 50V, To-251-4; Transistor Polarity:Npn; Collector Emitter Voltage Max:50V; Continuous Collector Current:5A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi 2SC5706-E

Certification

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2SC5706-E Specification

Part Number	Manufacturers	Description	Stock	Price
2SC5706-E DISTI #V36:1790_07310813	ON Semiconductor	Trans GP BJT NPN 50V 5A 3-Pin(3 Tab) TP Bag RoHS: Compliant	490	1 $0.8036 10 $0.6635 100 $0.3913 1000 $0.3035 2500 $0.2551 10000 $0.2433
2SC5706-E DISTI #V99:2348_07310813	ON Semiconductor	Trans GP BJT NPN 50V 5A 3-Pin(3 Tab) TP Bag RoHS: Compliant	474	1 $0.8036 10 $0.6635 100 $0.3913 1000 $0.3035 2500 $0.266
2SC5706-E DISTI #2SC5706-EOS-ND	ON Semiconductor	TRANS NPN 50V 5A TP RoHS: Compliant	914	1 $0.77 10 $0.681 100 $0.5217 500 $0.41244 1000 $0.32995
2SC5706-E DISTI #26622220	ON Semiconductor	Trans GP BJT NPN 50V 5A 3-Pin(3 Tab) TP Bag RoHS: Compliant	15000	1500 $0.3
2SC5706-E DISTI #31701231	ON Semiconductor	Trans GP BJT NPN 50V 5A 3-Pin(3 Tab) TP Bag RoHS: Compliant	490	26 $0.6032 100 $0.3913 1000 $0.3035 2500 $0.2551 10000 $0.2433
2SC5706-E DISTI #27130275	ON Semiconductor	Trans GP BJT NPN 50V 5A 3-Pin(3 Tab) TP Bag RoHS: Compliant	474	23 $0.6032 100 $0.3913 1000 $0.3035 2500 $0.266
2SC5706-E DISTI #2SC5706-E	ON Semiconductor	Trans GP BJT NPN 50V 5A 3-Pin(3 Tab) TP Bag - Bulk RoHS: Compliant	0	1500 $0.2559 3000 $0.2549 4500 $0.2509 7500 $0.2479 15000 $0.2419
2SC5706-E DISTI #65T2494	ON Semiconductor	Trans GP BJT NPN 50V 5A 3-Pin(3 Tab) TP Bag - Bulk RoHS: Compliant	0	1 $0.789 10 $0.7 100 $0.54 500 $0.431 1000 $0.349
2SC5706-E DISTI #65T2494	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 50V, TO-251-4, Transisto	967	1 $0.357 10 $0.357 100 $0.357 500 $0.328 1000 $0.303
2SC5706-E DISTI #863-2SC5706-E	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 5A 50V RoHS: Compliant	20687	1 $0.74 10 $0.609 100 $0.393 1000 $0.315
2SC5706-H DISTI #863-2SC5706-H	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 5A 50V RoHS: Compliant	95	1 $0.65 10 $0.533 100 $0.325 1000 $0.251 2500 $0.214
2SC5706-E DISTI #	ON Semiconductor		1231
2SC5706-E DISTI #2845291	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 50V, TO-251-4 RoHS: Compliant	440	5 $1.05 100 $0.791 500 $0.626 1000 $0.5
2SC5706-E DISTI #2845291	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 50V, TO-251-4	520	5 $0.594 25 $0.54 100 $0.405 250 $0.363 500 $0.32
2SC5706-E DISTI #	ON Semiconductor	Vceo=50V,Ic=5A,NPN transistor	470	1 $0.72 100 $0.46 500 $0.38 1000 $0.35

2SC5706~~(21)~~
2SC570~~(39)~~
2SC57~~(102)~~
2SC5~~(172)~~
2SC~~(452)~~

ON Semiconductor 2SC5706-E

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