Rohm Semiconductor 2SC4725TLP
- Part Number:
- 2SC4725TLP
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3585216-2SC4725TLP
- Description:
- TRANS NPN 20V 0.05A SOT-416
- Datasheet:
- 2SC4725TLP
Rohm Semiconductor 2SC4725TLP technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SC4725TLP.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC18V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating50mA
- Frequency1.5GHz
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SC4725
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product1.5 GHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 10mA 10V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 20mA
- Collector Emitter Breakdown Voltage20V
- Transition Frequency1500MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)3V
- hFE Min82
- Continuous Collector Current50mA
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC4725TLP Overview
In this device, the DC current gain is 82 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 4mA, 20mA.Maintaining the continuous collector voltage at 50mA is essential for high efficiency.Keeping the emitter base voltage at 3V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (50mA).1500MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 50mA volts.
2SC4725TLP Features
the DC current gain for this device is 82 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 20mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 1500MHz
2SC4725TLP Applications
There are a lot of ROHM Semiconductor
2SC4725TLP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 82 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 4mA, 20mA.Maintaining the continuous collector voltage at 50mA is essential for high efficiency.Keeping the emitter base voltage at 3V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (50mA).1500MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 50mA volts.
2SC4725TLP Features
the DC current gain for this device is 82 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 20mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 1500MHz
2SC4725TLP Applications
There are a lot of ROHM Semiconductor
2SC4725TLP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC4725TLP More Descriptions
2SC4725 Series 20 V 50 mA SMT NPN High Frequency Amplifier Transistor - SC-75A
Trans GP BJT NPN 20V 0.05A 3-Pin EMT T/R
RF TRANS, NPN, 20V, 1.5GHZ, SC-75A; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 1.5GHz; Power Dissipation Pd: 150mW; DC Collector Current: 50mA; DC Current Gain hFE: 82hFE; RF Transistor Case: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Trans GP BJT NPN 20V 0.05A 3-Pin EMT T/R
RF TRANS, NPN, 20V, 1.5GHZ, SC-75A; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 1.5GHz; Power Dissipation Pd: 150mW; DC Collector Current: 50mA; DC Current Gain hFE: 82hFE; RF Transistor Case: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to 2SC4725TLP.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRadiation HardeningRoHS StatusLead FreePower - MaxJESD-30 CodeCase ConnectionCurrent - Collector (Ic) (Max)VCEsat-MaxREACH SVHCReach Compliance CodeVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
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2SC4725TLP13 WeeksCopper, Silver, TinSurface MountSurface MountSC-75, SOT-4163SILICON150°C TJTape & Reel (TR)2007e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors18V150mWDUALGULL WING26050mA1.5GHz102SC472531Single150mWAMPLIFIER1.5 GHzNPNNPN20V50mA82 @ 10mA 10V500nA ICBO500mV @ 4mA, 20mA20V1500MHz500mV20V30V3V8250mANoROHS3 CompliantLead Free----------
-
--Surface MountSurface MountSC-70, SOT-323--125°C TJTape & Reel (TR)2009--Discontinued1 (Unlimited)-----100mW------2SC4116-----80MHz-NPN250mV150mA70 @ 2mA 6V100nA ICBO250mV @ 10mA, 100mA50V--50V-5V70--RoHS Compliant-100mW--------
-
-Copper, TinSurface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)1998e2yesNot For New Designs1 (Unlimited)3-TIN COPPEROther Transistors50V500mW-FLAT2603A-102SC467231Single-AMPLIFIER210MHzNPNNPN50V3A120 @ 500mA 2V100nA ICBO350mV @ 50mA, 1A50V210MHz-50V60V6V82-NoROHS3 CompliantLead Free-R-PSSO-F3COLLECTOR2A0.35 VNo SVHC---
-
14 Weeks--Surface MountSC-70, SOT-323--125°C TJCut Tape (CT)--yesDiscontinued1 (Unlimited)--------------------NPN--70 @ 2mA 6V100nA ICBO250mV @ 10mA, 100mA---------RoHS Compliant-100mW--150mA--unknown50V80MHz
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