Rohm Semiconductor 2SC4082T106P
- Part Number:
- 2SC4082T106P
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3585237-2SC4082T106P
- Description:
- TRANS NPN 20V 0.05A SOT-323
- Datasheet:
- 2SC4082T106P
Rohm Semiconductor 2SC4082T106P technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SC4082T106P.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC18V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating50mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SC4082
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product1.5 GHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 10mA 10V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 20mA
- Collector Emitter Breakdown Voltage20V
- Max Frequency1.5GHz
- Transition Frequency1500MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)3V
- hFE Min56
- Continuous Collector Current50mA
- Highest Frequency BandVERY HIGH FREQUENCY B
- Collector-Base Capacitance-Max1.5pF
- Height800μm
- Length2mm
- Width1.25mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC4082T106P Overview
In this device, the DC current gain is 82 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 4mA, 20mA.Maintaining the continuous collector voltage at 50mA is essential for high efficiency.Keeping the emitter base voltage at 3V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (50mA).1500MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 50mA volts.
2SC4082T106P Features
the DC current gain for this device is 82 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 20mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 1500MHz
2SC4082T106P Applications
There are a lot of ROHM Semiconductor
2SC4082T106P applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 82 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 4mA, 20mA.Maintaining the continuous collector voltage at 50mA is essential for high efficiency.Keeping the emitter base voltage at 3V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (50mA).1500MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 50mA volts.
2SC4082T106P Features
the DC current gain for this device is 82 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 20mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 1500MHz
2SC4082T106P Applications
There are a lot of ROHM Semiconductor
2SC4082T106P applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC4082T106P More Descriptions
2SC4082 Series 20 V 50 mA SMT NPN High-Frequency Amplifier Transistor - SC-70
Trans Gp Bjt Npn 20V 0.05A 3-Pin Umt T/r Rohs Compliant: Yes
RF TRANS, NPN, 20V, 1.5GHZ, SC-70; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 1.5GHz; Power Dissipation Pd: 200mW; DC Collector Current: 50mA; DC Current Gain hFE: 82hFE; RF Transistor Case: SC-70; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Trans Gp Bjt Npn 20V 0.05A 3-Pin Umt T/r Rohs Compliant: Yes
RF TRANS, NPN, 20V, 1.5GHZ, SC-70; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 1.5GHz; Power Dissipation Pd: 200mW; DC Collector Current: 50mA; DC Current Gain hFE: 82hFE; RF Transistor Case: SC-70; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to 2SC4082T106P.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHighest Frequency BandCollector-Base Capacitance-MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeLifecycle StatusReach Compliance CodeFrequency - TransitionSurface MountCurrent - Collector (Ic) (Max)ConfigurationPower - MaxView Compare
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2SC4082T106P13 WeeksCopper, Silver, TinSurface MountSurface MountSC-70, SOT-3233SILICON150°C TJTape & Reel (TR)2007e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other Transistors18V200mWDUALGULL WING26050mA102SC408231Single200mWAMPLIFIER1.5 GHzNPNNPN20V50mA82 @ 10mA 10V500nA ICBO500mV @ 4mA, 20mA20V1.5GHz1500MHz500mV20V30V3V5650mAVERY HIGH FREQUENCY B1.5pF800μm2mm1.25mmNoROHS3 CompliantLead Free--------
-
2 Weeks--Surface MountTO-252-3, DPak (2 Leads Tab), SC-633-150°C TJTape & Reel (TR)2012e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)---1W-----2SC41353-Single----NPN100V2A140 @ 100mA 5V100nA ICBO400mV @ 100mA, 1A100V390MHz-400mV-120V6V100---5.5mm6.5mm2.3mm-ROHS3 CompliantLead FreeACTIVE (Last Updated: 2 days ago)not_compliant120MHz----
-
4 Weeks--Through HoleTO-251-3 Short Leads, IPak, TO-251AA3-150°C TJBulk2012e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)-Other Transistors-1W-----2SC40273-Single--120MHzNPNNPN160V1.5A100 @ 100mA 5V1μA ICBO450mV @ 50mA, 500mA160V--130mV-180V6V140-------ROHS3 CompliantLead FreeACTIVE (Last Updated: 1 week ago)--NO1.5A--
-
26 Weeks-Surface MountSurface MountSC-89, SOT-4903SILICON150°C TJTape & Reel (TR)2009--Not For New Designs1 (Unlimited)3EAR99--Other Transistors-150mWDUALFLATNOT SPECIFIED-NOT SPECIFIED2SC4617-1--AMPLIFIER180MHzNPNNPN400mV150mA120 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V-180MHz-50V60V7V120-------ROHS3 Compliant------SINGLE150mW
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