Rohm Semiconductor 2SC4061KT146N
- Part Number:
- 2SC4061KT146N
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2464673-2SC4061KT146N
- Description:
- TRANS NPN 300V 0.1A SOT-346
- Datasheet:
- 2SC4061KT146N
Rohm Semiconductor 2SC4061KT146N technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SC4061KT146N.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SC4061
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 10mA 10V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic2V @ 5mA, 50mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage2V
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- hFE Min56
- Continuous Collector Current100mA
- VCEsat-Max2 V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC4061KT146N Overview
This device has a DC current gain of 56 @ 10mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 5mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 100mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 100mA volts is possible.
2SC4061KT146N Features
the DC current gain for this device is 56 @ 10mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
2SC4061KT146N Applications
There are a lot of ROHM Semiconductor
2SC4061KT146N applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 56 @ 10mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 5mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 100mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 100mA volts is possible.
2SC4061KT146N Features
the DC current gain for this device is 56 @ 10mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
2SC4061KT146N Applications
There are a lot of ROHM Semiconductor
2SC4061KT146N applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC4061KT146N More Descriptions
Trans GP BJT NPN 300V 0.1A 3-Pin SMT T/R
TRANS, NPN, 300V, 0.1A, 150DEG C, 0.2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 56hFE; Transistor Case Style: SOT-346; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
TRANS NPN 300V 0.1A SOT-346
TRANS NPN 300V 0.1A SMT3
OEMs, CMs ONLY (NO BROKERS)
TRANS, NPN, 300V, 0.1A, 150DEG C, 0.2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 56hFE; Transistor Case Style: SOT-346; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
TRANS NPN 300V 0.1A SOT-346
TRANS NPN 300V 0.1A SMT3
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to 2SC4061KT146N.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxRadiation HardeningRoHS StatusLead FreeLifecycle StatusSurface MountCurrent - Collector (Ic) (Max)Power - MaxReach Compliance CodeHeightLengthWidthView Compare
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2SC4061KT146N13 WeeksCopper, Silver, TinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)2012e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors300V200mWDUALGULL WING260100mA100MHz102SC406131Single200mWAMPLIFIER100MHzNPNNPN300V100mA56 @ 10mA 10V500nA ICBO2V @ 5mA, 50mA300V100MHz2V300V300V5V56100mA2 VNoROHS3 CompliantLead Free---------
-
4 Weeks--Through HoleTO-251-3 Short Leads, IPak, TO-251AA3-150°C TJBulk2012e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)Other Transistors-1W------2SC40273-Single--120MHzNPNNPN160V1.5A100 @ 100mA 5V1μA ICBO450mV @ 50mA, 500mA160V-130mV-180V6V140---ROHS3 CompliantLead FreeACTIVE (Last Updated: 1 week ago)NO1.5A-----
-
--Surface MountSurface MountSC-70, SOT-323--125°C TJTape & Reel (TR)2009--Discontinued1 (Unlimited)-----100mW------2SC4116-----80MHz-NPN250mV150mA70 @ 2mA 6V100nA ICBO250mV @ 10mA, 100mA50V--50V-5V70---RoHS Compliant----100mW----
-
14 Weeks-Surface MountSurface MountSC-70, SOT-3233-125°C TJCut Tape (CT)2014--Discontinued1 (Unlimited)---Other Transistors-100mW----30MHz---1Single100mW--NPNNPN20V300mA200 @ 4mA 2V100nA ICBO100mV @ 3mA, 30A--100mV-50V25V----RoHS Compliant---300mA-unknown900μm2mm1.25mm
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