ON Semiconductor 2SC3647S-TD-E
- Part Number:
- 2SC3647S-TD-E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585292-2SC3647S-TD-E
- Description:
- TRANS NPN 100V 2A SOT89-3
- ECAD Model:
-
- Datasheet:
- 2SC3647S-TD-E
ON Semiconductor 2SC3647S-TD-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SC3647S-TD-E.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin/Bismuth (Sn/Bi)
- Max Power Dissipation500mW
- Pin Count3
- Element ConfigurationSingle
- Gain Bandwidth Product120MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage100V
- Max Frequency1MHz
- Collector Emitter Saturation Voltage130mV
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)6V
- Height1.5mm
- Length4.5mm
- Width2.5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC3647S-TD-E Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 130mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 2A volts.
2SC3647S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at 6V
2SC3647S-TD-E Applications
There are a lot of ON Semiconductor
2SC3647S-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 130mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 2A volts.
2SC3647S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at 6V
2SC3647S-TD-E Applications
There are a lot of ON Semiconductor
2SC3647S-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC3647S-TD-E More Descriptions
Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Trans GP BJT NPN 100V 2A 4-Pin(3 Tab) PCP T/R - Tape and Reel
Transistor NPN 100V 2A hfe140-280 SOT89 | ON Semiconductor 2SC3647S-TD-E
ON Semi 2SC3647S-TD-E NPN Bipolar Transistor, 2 A, 100 V, 3-Pin PCP
Bipolar Transistors - BJT BIP NPN 2A 100V
TRANSISTOR, NPN, 100V, 2A, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Typ Gain Bandwidth ft:120MHz; Power Dissipation Pd:500mW; DC Collector Current:2A; DC Current Gain hFE:280; Transistor Case Style:SOT-89; No. of Pins:3
Trans GP BJT NPN 100V 2A 4-Pin(3 Tab) PCP T/R - Tape and Reel
Transistor NPN 100V 2A hfe140-280 SOT89 | ON Semiconductor 2SC3647S-TD-E
ON Semi 2SC3647S-TD-E NPN Bipolar Transistor, 2 A, 100 V, 3-Pin PCP
Bipolar Transistors - BJT BIP NPN 2A 100V
TRANSISTOR, NPN, 100V, 2A, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Typ Gain Bandwidth ft:120MHz; Power Dissipation Pd:500mW; DC Collector Current:2A; DC Current Gain hFE:280; Transistor Case Style:SOT-89; No. of Pins:3
The three parts on the right have similar specifications to 2SC3647S-TD-E.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishMax Power DissipationPin CountElement ConfigurationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthRadiation HardeningRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMountTransistor Element MaterialNumber of TerminationsHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransition FrequencySupplier Device PackageBase Part NumberView Compare
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2SC3647S-TD-EACTIVE (Last Updated: 6 days ago)5 WeeksSurface MountTO-243AA3150°C TJTape & Reel (TR)2005e6yesActive1 (Unlimited)EAR99Tin/Bismuth (Sn/Bi)500mW3Single120MHzNPN100V2A100 @ 100mA 5V100nA ICBO400mV @ 100mA, 1A100V1MHz130mV100V120V6V1.5mm4.5mm2.5mmNoROHS3 CompliantLead Free------------------------ -
--Through HoleSC-71-150°C TJBulk2009--Obsolete1 (Unlimited)------NPN--70 @ 500mA 2V1μA ICBO500mV @ 50mA, 1A------------1W80V2A100MHz-------------------
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--Through HoleTO-225AA, TO-126-3-150°C TJBulk2003-yesObsolete1 (Unlimited)EAR99TIN SILVER BISMUTH COPPER4W---NPN500mV150mA20 @ 100mA 5V10μA500mV @ 15mA, 150mA50V--50V------RoHS CompliantLead Free4W--300MHzThrough HoleSILICON38541.29.00.75Other TransistorsSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLEISOLATEDAMPLIFIERNPN350MHz--
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--Surface MountTO-236-3, SC-59, SOT-23-3-150°C TJTape & Reel (TR)2003--Obsolete1 (Unlimited)--200mW---NPN-80mA50 @ 20mA 8V1μA ICBO-10V--10V------RoHS CompliantLead Free200mW10V80mA6GHzSurface Mount----------------Mini3-G12SC3704
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