Rohm Semiconductor 2SB1184TLQ
- Part Number:
- 2SB1184TLQ
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2466520-2SB1184TLQ
- Description:
- TRANS PNP 60V 3A SOT-428
- ECAD Model:
-
- Datasheet:
- 2SB1184, 2SB1243
Rohm Semiconductor 2SB1184TLQ technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SB1184TLQ.
- Contact PlatingCopper, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Copper (Sn98Cu2)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation1W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-3A
- Frequency70MHz
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SB1184
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product70MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA 3V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency70MHz
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)-5V
- hFE Min82
- Continuous Collector Current-3A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SB1184TLQ Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 70MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 3A volts is possible.
2SB1184TLQ Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 70MHz
2SB1184TLQ Applications
There are a lot of ROHM Semiconductor
2SB1184TLQ applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 70MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 3A volts is possible.
2SB1184TLQ Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 70MHz
2SB1184TLQ Applications
There are a lot of ROHM Semiconductor
2SB1184TLQ applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SB1184TLQ More Descriptions
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SB1184 Series 50 V 3 A Surface Mount PNP Power Transistor - SC-63
Trans GP BJT PNP 50V 3A 3-Pin(2 Tab) CPT T/R
2SB1184 Series 50 V 3 A Surface Mount PNP Power Transistor - SC-63
Trans GP BJT PNP 50V 3A 3-Pin(2 Tab) CPT T/R
The three parts on the right have similar specifications to 2SB1184TLQ.
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ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRadiation HardeningRoHS StatusLead FreeLifecycle StatusFactory Lead TimeSurface MountConfigurationCurrent - Collector (Ic) (Max)Frequency - TransitionCase ConnectionCollector Emitter Saturation VoltageView Compare
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2SB1184TLQCopper, TinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON150°C TJTape & Reel (TR)2004e2yesNot For New Designs1 (Unlimited)2EAR99Tin/Copper (Sn98Cu2)Other Transistors-60V1WGULL WING260-3A70MHz102SB11843R-PSSO-G21Single1WSWITCHING70MHzPNPPNP50V3A120 @ 500mA 3V1μA ICBO1V @ 200mA, 2A60V70MHz60V60V-5V82-3ANoROHS3 CompliantLead Free--------- -
--Through HoleTO-251-3 Short Leads, IPak, TO-251AA3-150°C TJBulk2000e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)Other Transistors-1W-NOT SPECIFIED--NOT SPECIFIED2SB12023------PNPPNP50V5A140 @ 100mA 2V1μA ICBO700mV @ 100mA, 2A50V-50V60V-6V100--ROHS3 CompliantLead FreeACTIVE (Last Updated: 1 day ago)2 WeeksNOSingle3A150MHz--
-
Copper, TinSurface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)1999e2yesNot For New Designs1 (Unlimited)3-TIN COPPEROther Transistors-80V2WFLAT260-1A-102SB12603R-PSSO-F31Single-SWITCHING100MHzPNPPNP80V1A82 @ 100mA 3V1μA ICBO400mV @ 50mA, 500mA80V100MHz--80V5V82-1ANoROHS3 CompliantLead Free-10 Weeks--1A-COLLECTOR-
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-633-150°C TJTape & Reel (TR)2011e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)Other Transistors-1W---130MHz-2SB12153-1Single1W-130MHzPNPPNP100V3A140 @ 500mA 5V1μA ICBO500mV @ 150mA, 1.5A100V--120V-6V--NoROHS3 CompliantLead FreeACTIVE (Last Updated: 5 days ago)7 WeeksYES-----200mV
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