2SB1182TLR

Rohm Semiconductor 2SB1182TLR

Part Number:
2SB1182TLR
Manufacturer:
Rohm Semiconductor
Ventron No:
3068937-2SB1182TLR
Description:
TRANS PNP 32V 2A SOT-428
ECAD Model:
Datasheet:
2SB1182/1240

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Specifications
Rohm Semiconductor 2SB1182TLR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SB1182TLR.
  • Contact Plating
    Copper, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Copper (Sn98Cu2)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -32V
  • Max Power Dissipation
    10W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -2A
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    2SB1182
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power - Max
    10W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    32V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    180 @ 500mA 3V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    800mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
    32V
  • Transition Frequency
    100MHz
  • Max Breakdown Voltage
    32V
  • Collector Base Voltage (VCBO)
    -32V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    180
  • Continuous Collector Current
    -2A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2SB1182TLR Overview
This device has a DC current gain of 180 @ 500mA 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -2A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 32V volts.The maximum collector current is 2A volts.

2SB1182TLR Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz


2SB1182TLR Applications
There are a lot of ROHM Semiconductor
2SB1182TLR applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2SB1182TLR More Descriptions
Trans GP BJT PNP 32V 2A 3-Pin (2 Tab) CPT T/R
French Electronic Distributor since 1988
TRANS PNP 32V 2A SOT-428
TRANS PNP 32V 2A CPT3
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to 2SB1182TLR.
  • Image
    Part Number
    Manufacturer
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power - Max
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Surface Mount
    Configuration
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Case Connection
    Frequency
    Power Dissipation
    Collector Emitter Saturation Voltage
    View Compare
  • 2SB1182TLR
    2SB1182TLR
    Copper, Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2004
    e2
    yes
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    Tin/Copper (Sn98Cu2)
    Other Transistors
    -32V
    10W
    GULL WING
    260
    -2A
    10
    2SB1182
    3
    R-PSSO-G2
    1
    Single
    10W
    SWITCHING
    100MHz
    PNP
    PNP
    32V
    2A
    180 @ 500mA 3V
    100nA ICBO
    800mV @ 200mA, 2A
    32V
    100MHz
    32V
    -32V
    5V
    180
    -2A
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2SB1202S-E
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    -
    150°C TJ
    Bulk
    2000
    e6
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin/Bismuth (Sn/Bi)
    Other Transistors
    -
    1W
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    2SB1202
    3
    -
    -
    -
    -
    -
    -
    PNP
    PNP
    50V
    5A
    140 @ 100mA 2V
    1μA ICBO
    700mV @ 100mA, 2A
    50V
    -
    50V
    60V
    -6V
    100
    -
    -
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 1 day ago)
    2 Weeks
    NO
    Single
    3A
    150MHz
    -
    -
    -
    -
  • 2SB1260T100P
    Copper, Tin
    Surface Mount
    Surface Mount
    TO-243AA
    4
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1999
    e2
    yes
    Not For New Designs
    1 (Unlimited)
    3
    -
    TIN COPPER
    Other Transistors
    -80V
    2W
    FLAT
    260
    -1A
    10
    2SB1260
    3
    R-PSSO-F3
    1
    Single
    -
    SWITCHING
    100MHz
    PNP
    PNP
    80V
    1A
    82 @ 100mA 3V
    1μA ICBO
    400mV @ 50mA, 500mA
    80V
    100MHz
    -
    -80V
    5V
    82
    -1A
    No
    ROHS3 Compliant
    Lead Free
    -
    10 Weeks
    -
    -
    1A
    -
    COLLECTOR
    -
    -
    -
  • 2SB1215S-TL-E
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    150°C TJ
    Tape & Reel (TR)
    2011
    e6
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin/Bismuth (Sn/Bi)
    Other Transistors
    -
    1W
    -
    -
    -
    -
    2SB1215
    3
    -
    1
    Single
    -
    -
    130MHz
    PNP
    PNP
    100V
    3A
    140 @ 500mA 5V
    1μA ICBO
    500mV @ 150mA, 1.5A
    100V
    -
    -
    120V
    -6V
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 5 days ago)
    7 Weeks
    YES
    -
    -
    -
    -
    130MHz
    1W
    -200mV
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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