Rohm Semiconductor 2SB1182TLQ

Name: 2SB1182TLQ
Brand: Rohm Semiconductor
SKU: 2462937-2SB1182TLQ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SB1182TLQ

Manufacturer:: Rohm Semiconductor

Ventron No:: 2462937-2SB1182TLQ

Description:: TRANS PNP 32V 2A SOT-428

ECAD Model:

Datasheet:: 2SB1182/1240

Specifications

Rohm Semiconductor 2SB1182TLQ technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SB1182TLQ.

Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin/Copper (Sn98Cu2)
Subcategory
Other Transistors
Voltage - Rated DC
-32V
Max Power Dissipation
10W
Terminal Form
GULL WING
Current Rating
-2A
Base Part Number
2SB1182
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Power - Max
10W
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
800mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
32V
Transition Frequency
100MHz
Max Breakdown Voltage
32V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
82
Continuous Collector Current
-2A
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2SB1182TLQ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

2SB1182TLQ Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz

2SB1182TLQ Applications
There are a lot of ROHM Semiconductor
2SB1182TLQ applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2SB1182TLQ More Descriptions

2SB1182 Series PNP 10 W 32 V 2 A Surface Mount Medium Power Transistor - SC-63
Trans GP BJT PNP 32V 2A 10000mW 3-Pin(2 Tab) CPT T/R
TRANSISTOR D-PAK;BCE PNP; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:1W; DC Collector Current:2A; DC Current Gain hFE:82; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-428; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:2A; Gain Bandwidth ft Typ:100MHz; Package / Case:SOT-428; Power Dissipation Pd:1W; Termination Type:SMD

Product Comparison

The three parts on the right have similar specifications to 2SB1182TLQ.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Current Rating

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Power Dissipation

Power - Max

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Case Connection

Current - Collector (Ic) (Max)

Lifecycle Status

Frequency - Transition

Surface Mount

Frequency

Collector Emitter Saturation Voltage

View Compare
2SB1182TLQ

Rohm Semiconductor

Copper, Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

1998

e2

yes

Not For New Designs

1 (Unlimited)

2

SMD/SMT

EAR99

Tin/Copper (Sn98Cu2)

Other Transistors

-32V

10W

GULL WING

-2A

2SB1182

3

R-PSSO-G2

1

Single

1W

10W

SWITCHING

100MHz

PNP

PNP

800mV

2A

120 @ 500mA 3V

1μA ICBO

800mV @ 200mA, 2A

32V

100MHz

32V

-40V

-5V

82

-2A

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
2SB1260T100P

Rohm Semiconductor

Copper, Tin

Surface Mount

Surface Mount

TO-243AA

4

SILICON

150°C TJ

Tape & Reel (TR)

1999

e2

yes

Not For New Designs

1 (Unlimited)

3

-

-

TIN COPPER

Other Transistors

-80V

2W

FLAT

-1A

2SB1260

3

R-PSSO-F3

1

Single

-

-

SWITCHING

100MHz

PNP

PNP

80V

1A

82 @ 100mA 3V

1μA ICBO

400mV @ 50mA, 500mA

80V

100MHz

-

-80V

5V

82

-1A

-

No

ROHS3 Compliant

Lead Free

10 Weeks

260

10

COLLECTOR

1A

-

-

-

-

-

2SB1182TLQ vs 2SB1260T100P
2SB1201S-E

ON Semiconductor

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

150°C TJ

Bulk

2012

e6

yes

Active

1 (Unlimited)

-

-

EAR99

Tin/Bismuth (Sn/Bi)

-

-

800mW

-

-

2SB1201

3

-

-

-

-

800mW

-

-

-

PNP

50V

2A

140 @ 100mA 2V

100nA ICBO

700mV @ 50mA, 1A

50V

-

-

60V

-6V

100

-

-

-

ROHS3 Compliant

Lead Free

2 Weeks

-

-

-

-

ACTIVE (Last Updated: 1 week ago)

150MHz

-

-

-

2SB1182TLQ vs 2SB1201S-E
2SB1215S-TL-E

ON Semiconductor

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

150°C TJ

Tape & Reel (TR)

2011

e6

yes

Active

1 (Unlimited)

-

-

EAR99

Tin/Bismuth (Sn/Bi)

Other Transistors

-

1W

-

-

2SB1215

3

-

1

Single

1W

-

-

130MHz

PNP

PNP

100V

3A

140 @ 500mA 5V

1μA ICBO

500mV @ 150mA, 1.5A

100V

-

-

120V

-6V

-

-

-

No

ROHS3 Compliant

Lead Free

7 Weeks

-

-

-

-

ACTIVE (Last Updated: 5 days ago)

-

YES

130MHz

-200mV

2SB1182TLQ vs 2SB1215S-TL-E