ON Semiconductor 2SB1124T-TD-E
- Part Number:
- 2SB1124T-TD-E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585249-2SB1124T-TD-E
- Description:
- TRANS PNP 50V 3A PCP
- ECAD Model:
-
- Datasheet:
- 2SB1124T-TD-E
ON Semiconductor 2SB1124T-TD-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SB1124T-TD-E.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Bismuth (Sn/Bi)
- Max Power Dissipation500mW
- Terminal FormFLAT
- Frequency150MHz
- Base Part Number2SB1124
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA 2V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 100mA, 2A
- Collector Emitter Breakdown Voltage50V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-700mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-6V
- Height1.5mm
- Length4.5mm
- Width2.5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SB1124T-TD-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of -700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 100mA, 2A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 3A volts at its maximum.
2SB1124T-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 150MHz
2SB1124T-TD-E Applications
There are a lot of ON Semiconductor
2SB1124T-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of -700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 100mA, 2A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 3A volts at its maximum.
2SB1124T-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 150MHz
2SB1124T-TD-E Applications
There are a lot of ON Semiconductor
2SB1124T-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SB1124T-TD-E More Descriptions
Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP
ON Semi 2SB1124T-TD-E PNP Bipolar Transistor; 3 A; 50 V; 3-Pin PCP
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA
Trans GP BJT PNP 50V 3A 500mW 4-Pin(3 Tab) SOT-89 T/R
TRANSISTOR, PNP, -50V, -3A, SOT-89; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: -3A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
ON Semi 2SB1124T-TD-E PNP Bipolar Transistor; 3 A; 50 V; 3-Pin PCP
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA
Trans GP BJT PNP 50V 3A 500mW 4-Pin(3 Tab) SOT-89 T/R
TRANSISTOR, PNP, -50V, -3A, SOT-89; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: -3A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to 2SB1124T-TD-E.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal FormFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageVoltage - Rated DCCurrent RatingPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSubcategoryPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatushFE MinSurface MountView Compare
-
2SB1124T-TD-EACTIVE (Last Updated: 2 days ago)14 WeeksSurface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)2003e6yesActive1 (Unlimited)3EAR99Tin/Bismuth (Sn/Bi)500mWFLAT150MHz2SB112431Single500mWCOLLECTORSWITCHING150MHzPNPPNP50V3A200 @ 100mA 2V1μA ICBO700mV @ 100mA, 2A50V150MHz-700mV50V-60V-6V1.5mm4.5mm2.5mmNoROHS3 CompliantLead Free---------------- -
--Surface MountSurface MountSC-70, SOT-323--150°C TJTape & Reel (TR)2000--Obsolete1 (Unlimited)---150mW--2SB1219--------PNP600mV500mA170 @ 150mA 10V100nA ICBO600mV @ 30mA, 300mA50V--50V------RoHS Compliant-SMini3-G1-50V-500mA150mW50V500mA200MHz--------
-
--Through HoleThrough Hole3-SIP-SILICON150°C TJTape & Box (TB)2004--Obsolete1 (Unlimited)3EAR99-1W----1Single--SWITCHING150MHzPNPPNP500mV1A180 @ 100mA 3V500nA ICBO500mV @ 50mA, 500mA32V150MHz-200mV--40V-5V----ROHS3 CompliantLead Free--32V-1A--1A-Other TransistorsNOT SPECIFIEDunknownNOT SPECIFIEDR-PSIP-T3Not Qualified120-
-
ACTIVE (Last Updated: 5 days ago)7 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-633-150°C TJTape & Reel (TR)2011e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)1W-130MHz2SB121531Single1W--130MHzPNPPNP100V3A140 @ 500mA 5V1μA ICBO500mV @ 150mA, 1.5A100V--200mV-120V-6V---NoROHS3 CompliantLead Free-------Other Transistors------YES
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
01 February 2024
L7812CV Voltage Regulator: Internal Structure, Characteristics, Specifications and Other Details
Ⅰ. L7812CV descriptionⅡ. Internal structure and working principle of L7812CVⅢ. Pin configuration of L7812CVⅣ. What are the characteristics of L7812CV?Ⅴ. How to judge the quality of L7812CV?Ⅵ. Specifications... -
01 February 2024
REF3030AIDBZR Specifications, Symbol, Applications and REF3030AIDBZR vs REF3030AIDBZT
Ⅰ. Overview of REF3030AIDBZRⅡ. Specifications of REF3030AIDBZRⅢ. Symbol, footprint and pin configuration of REF3030AIDBZRⅣ. Features of REF3030AIDBZRⅤ. In which applications can we use REF3030AIDBZR?Ⅵ. What is the difference... -
02 February 2024
TL431AIDBZR Shunt Regulator Replacements, Working Principle, Typical Characteristics, Performance and Function
Ⅰ. Description of TL431AIDBZRⅡ. How does TL431AIDBZR work?Ⅲ. Typical characteristics of TL431AIDBZRⅣ. Performance of TL431AIDBZRⅤ. Specifications of TL431AIDBZRⅥ. How to adjust the output voltage of TL431AIDBZR?Ⅶ. Absolute maximum... -
02 February 2024
BQ7694003DBTR: Technical Parameters, Applications, Layout Guidelines and More
Ⅰ. Overview of BQ7694003DBTRⅡ. Technical parameters of BQ7694003DBTRⅢ. Functional block diagram of BQ7694003DBTRⅣ. Where is BQ7694003DBTR used?Ⅴ. BQ7694003DBTR layout guidelinesⅥ. How does BQ7694003DBTR achieve the balance and protection...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.