ON Semiconductor 2SB1121T-TD-E
Part Number:
- 2SB1121T-TD-E
Manufacturer:
- ON Semiconductor
Ventron No:
- 2845430-2SB1121T-TD-E
Description:
- TRANS PNP 25V 2A SOT89-3
Datasheet:
- 2SB1121T-TD-E
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Specifications
ON Semiconductor 2SB1121T-TD-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SB1121T-TD-E.
- Factory Lead Time2 Weeks
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Contact PlatingTin
- Package / CaseTO-243AA
- Mounting TypeSurface Mount
- MountSurface Mount
- Number of Pins3
- Published2012
- PackagingTape & Reel (TR)
- Operating Temperature150°C TJ
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation500mW
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Element ConfigurationSingle
- Gain Bandwidth Product150MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 75mA, 1.5A
- Collector Emitter Breakdown Voltage25V
- Max Frequency150MHz
- Collector Emitter Saturation Voltage-350mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)-30V
- Emitter Base Voltage (VEBO)-6V
- Width2.5mm
- Length4.5mm
- Height1.5mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
2SB1121T-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 2V.The collector emitter saturation voltage is -350mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 75mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
2SB1121T-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the emitter base voltage is kept at -6V
2SB1121T-TD-E Applications
There are a lot of ON Semiconductor
2SB1121T-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 2V.The collector emitter saturation voltage is -350mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 75mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
2SB1121T-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the emitter base voltage is kept at -6V
2SB1121T-TD-E Applications
There are a lot of ON Semiconductor
2SB1121T-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SB1121T-TD-E More Descriptions
Bipolar Transistor, -25V, -2A, Low VCE(sat) PNP Single PCP hFE = 200-400
25V, 2A, PNP Bipolar Transistor, SOT-89, h FE = 200-400
Trans GP BJT PNP 25V 2A 4-Pin(3 Tab) PCP T/R - Tape and Reel
ON Semi 2SB1121T-TD-E PNP Bipolar Transistor, 2 A, 25 V, 3-Pin PCP | ON Semiconductor 2SB1121T-TD-E
Bipolar Transistors - BJT BIP PNP 2A 25V
25V, 2A, PNP Bipolar Transistor, SOT-89, h FE = 200-400
Trans GP BJT PNP 25V 2A 4-Pin(3 Tab) PCP T/R - Tape and Reel
ON Semi 2SB1121T-TD-E PNP Bipolar Transistor, 2 A, 25 V, 3-Pin PCP | ON Semiconductor 2SB1121T-TD-E
Bipolar Transistors - BJT BIP PNP 2A 25V
Product Comparison
The three parts on the right have similar specifications to 2SB1121T-TD-E.
-
ImagePart NumberManufacturerFactory Lead TimeLifecycle StatusContact PlatingPackage / CaseMounting TypeMountNumber of PinsPublishedPackagingOperating TemperatureJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountElement ConfigurationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)WidthLengthHeightRoHS StatusLead FreeSurface MountTerminal FinishSubcategoryBase Part NumberConfigurationPolarity/Channel TypeCurrent - Collector (Ic) (Max)Frequency - TransitionhFE MinSupplier Device PackageVoltage - Rated DCCurrent RatingPower - MaxVoltage - Collector Emitter Breakdown (Max)Transistor Element MaterialNumber of TerminationsJESD-30 CodeQualification StatusNumber of ElementsTransistor ApplicationTransition FrequencyView Compare
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2SB1121T-TD-E2 WeeksACTIVE (Last Updated: 4 days ago)TinTO-243AASurface MountSurface Mount32012Tape & Reel (TR)150°C TJe6yesActive1 (Unlimited)EAR99500mWNOT SPECIFIEDnot_compliantNOT SPECIFIED3Single150MHzPNP25V2A100 @ 100mA 2V100nA ICBO600mV @ 75mA, 1.5A25V150MHz-350mV25V-30V-6V2.5mm4.5mm1.5mmROHS3 CompliantLead Free---------------------- -
2 WeeksACTIVE (Last Updated: 1 day ago)-TO-251-3 Short Leads, IPak, TO-251AAThrough Hole-32000Bulk150°C TJe6yesActive1 (Unlimited)EAR991WNOT SPECIFIED-NOT SPECIFIED3--PNP50V5A140 @ 100mA 2V1μA ICBO700mV @ 100mA, 2A50V--50V60V-6V---ROHS3 CompliantLead FreeNOTin/Bismuth (Sn/Bi)Other Transistors2SB1202SinglePNP3A150MHz100------------ -
---SC-70, SOT-323Surface MountSurface Mount-2000Tape & Reel (TR)150°C TJ--Obsolete1 (Unlimited)-150mW------PNP600mV500mA170 @ 150mA 10V100nA ICBO600mV @ 30mA, 300mA50V--50V-----RoHS Compliant----2SB1219--500mA200MHz-SMini3-G1-50V-500mA150mW50V------- -
---3-SIPThrough HoleThrough Hole-2004Tape & Box (TB)150°C TJ--Obsolete1 (Unlimited)EAR991WNOT SPECIFIEDunknownNOT SPECIFIED-Single150MHzPNP500mV1A180 @ 100mA 3V500nA ICBO500mV @ 50mA, 500mA32V--200mV--40V-5V---ROHS3 CompliantLead Free--Other Transistors--PNP1A-120--32V-1A--SILICON3R-PSIP-T3Not Qualified1SWITCHING150MHz
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