Rohm Semiconductor 2SA1834TLR

2SA1834TLR Overview
In this device, the DC current gain is 180 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -160mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 50mA, 4A.A -10A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.

2SA1834TLR Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -160mV
the vce saturation(Max) is 250mV @ 50mA, 4A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 150MHz


2SA1834TLR Applications
There are a lot of ROHM Semiconductor
2SA1834TLR applications of single BJT transistors.


Inverter
Interface
Driver
Muting