ON Semiconductor 2SA1774G
- Part Number:
- 2SA1774G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465611-2SA1774G
- Description:
- TRANS PNP 50V 0.1A SC75-3
- Datasheet:
- 2SA1774G
ON Semiconductor 2SA1774G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SA1774G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-50V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-100mA
- Frequency140MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2SA1774
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Transistor ApplicationAMPLIFIER
- Halogen FreeHalogen Free
- Gain Bandwidth Product140MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 6V
- Current - Collector Cutoff (Max)500pA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency140MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min150
- Height800μm
- Length1.65mm
- Width900μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SA1774G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 140MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 100mA volts.
2SA1774G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 140MHz
2SA1774G Applications
There are a lot of ON Semiconductor
2SA1774G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 140MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 100mA volts.
2SA1774G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 140MHz
2SA1774G Applications
There are a lot of ON Semiconductor
2SA1774G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SA1774G More Descriptions
ON Semi 2SA1774G PNP Bipolar Transistor; 0.1 A; 60 V; 3-Pin SC-75
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 50V 0.1A 150mW Automotive 3-Pin SOT-416 T/R
2SA Series 50 V 100 mA PNP Silicon General Purpose Amplifier Transistor - SC-75
Bipolar Transistors - BJT 100mA 60V PNP
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:100Ma; Power Dissipation Pd:150Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:140Mhz; Dc Current Gain Hfe:120Hferohs Compliant: Yes
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 50V 0.1A 150mW Automotive 3-Pin SOT-416 T/R
2SA Series 50 V 100 mA PNP Silicon General Purpose Amplifier Transistor - SC-75
Bipolar Transistors - BJT 100mA 60V PNP
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:100Ma; Power Dissipation Pd:150Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:140Mhz; Dc Current Gain Hfe:120Hferohs Compliant: Yes
The three parts on the right have similar specifications to 2SA1774G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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2SA1774GACTIVE (Last Updated: 1 day ago)2 WeeksTinSurface MountSC-75, SOT-416YES34.535924gSILICON150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors-50V150mWDUALGULL WING260-100mA140MHz402SA177431Single150mWAMPLIFIERHalogen Free140MHzPNPPNP50V100mA120 @ 1mA 6V500pA ICBO500mV @ 5mA, 50mA50V140MHz-500mV50V60V6V150800μm1.65mm900μmNo SVHCNoROHS3 CompliantLead Free----------
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--Silver, TinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-3--150°C TJTube2013--Obsolete1 (Unlimited)----1W----60MHz---1Single1W--60MHz-PNP50V5A120 @ 1A 1V1μA ICBO400mV @ 150mA, 3A50V---60V5V120-----RoHS CompliantLead FreeSurface MountPW-MOLD150°C-55°CPNP1W50V5A60MHz
-
---Surface MountTO-236-3, SC-59, SOT-23-3----150°C TJTape & Reel (TR)2003--Obsolete1 (Unlimited)----55V200mW----50mA--2SA10350--------PNP600mV50mA260 @ 2mA 5V1μA600mV @ 10mA, 100mA55V--55V--------RoHS CompliantLead FreeSurface MountMini3-G1---200mW55V50mA200MHz
-
---Through Hole3-SSIP----150°C TJTape & Box (TB)2003--Obsolete1 (Unlimited)----50V300mW----100mA--2SA1309--------PNP300mV100mA210 @ 2mA 10V1μA300mV @ 5mA, 50mA50V--50V--------RoHS Compliant-Through HoleNS-B1---300mW50V100mA80MHz
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