Rohm Semiconductor 2SA1579T106R
- Part Number:
- 2SA1579T106R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2463893-2SA1579T106R
- Description:
- TRANS PNP 120V 0.05A SOT-323
- Datasheet:
- 2SA1579(1514K/1038S)
Rohm Semiconductor 2SA1579T106R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SA1579T106R.
- Factory Lead Time10 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-120V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-50mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SA1579
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power - Max200mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product140MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 2mA 6V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage-120V
- Voltage - Collector Emitter Breakdown (Max)120V
- Transition Frequency140MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage120V
- Collector Base Voltage (VCBO)-120V
- Emitter Base Voltage (VEBO)-5V
- hFE Min180
- Continuous Collector Current-50mA
- VCEsat-Max0.5 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SA1579T106R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.Single BJT transistor is recommended to keep the continuous collector voltage at -50mA in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 140MHz.The breakdown input voltage is 120V volts.Device displays Collector Emitter Breakdown (120V maximal voltage).Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
2SA1579T106R Features
the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 140MHz
2SA1579T106R Applications
There are a lot of ROHM Semiconductor
2SA1579T106R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.Single BJT transistor is recommended to keep the continuous collector voltage at -50mA in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 140MHz.The breakdown input voltage is 120V volts.Device displays Collector Emitter Breakdown (120V maximal voltage).Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
2SA1579T106R Features
the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 140MHz
2SA1579T106R Applications
There are a lot of ROHM Semiconductor
2SA1579T106R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SA1579T106R More Descriptions
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
2SA1579 Series 120 V 50 mA SMT PNP High-Voltage Amplifier Transistor - SOT-323
Trans GP BJT PNP 120V 0.05A 200mW 3-Pin UMT T/R
TRANSISTOR,PNP,120V,0.05A,SOT-323; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:-120V; Gain Bandwidth ft Typ:140MHz; Power Dissipation Pd:200mW; DC Collector Current:-50mA; DC Current Gain hFE:180; Transistor ;RoHS Compliant: Yes
2SA1579 Series 120 V 50 mA SMT PNP High-Voltage Amplifier Transistor - SOT-323
Trans GP BJT PNP 120V 0.05A 200mW 3-Pin UMT T/R
TRANSISTOR,PNP,120V,0.05A,SOT-323; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:-120V; Gain Bandwidth ft Typ:140MHz; Power Dissipation Pd:200mW; DC Collector Current:-50mA; DC Current Gain hFE:180; Transistor ;RoHS Compliant: Yes
The three parts on the right have similar specifications to 2SA1579T106R.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Transition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusSurface MountConfigurationHalogen FreeFrequency - TransitionAdditional FeatureReach Compliance CodeJESD-30 CodeQualification StatusCase ConnectionJEDEC-95 CodeSupplier Device PackageCurrent - Collector (Ic) (Max)View Compare
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2SA1579T106R10 WeeksCopper, Silver, TinSurface MountSurface MountSC-70, SOT-3233SILICON150°C TJTape & Reel (TR)2001e1yesNot For New Designs1 (Unlimited)3EAR99TIN SILVER COPPER8541.21.00.75Other Transistors-120V200mWDUALGULL WING260-50mA102SA157931Single200mWAMPLIFIER140MHzPNPPNP500mV50mA180 @ 2mA 6V500nA ICBO500mV @ 1mA, 10mA-120V120V140MHz-500mV120V-120V-5V180-50mA0.5 VNo SVHCNoROHS3 CompliantLead Free--------------
-
2 Weeks--Surface MountTO-252-3, DPak (2 Leads Tab), SC-633-150°C TJTape & Reel (TR)2012e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)-Other Transistors-1W-----2SA15523--1W--PNPPNP160V1.5A200 @ 100mA 5V1μA ICBO500mV @ 50mA, 500mA160V----180V6V100----ROHS3 CompliantLead FreeACTIVE (Last Updated: 18 hours ago)YESSingleHalogen Free120MHz--------
-
12 Weeks-Through HoleThrough HoleTO-220-3 Full Pack-SILICON150°C TJBulk2007-yesActive1 (Unlimited)3EAR99--Other Transistors-35WSINGLE-NOT SPECIFIED-NOT SPECIFIED-31-35WSWITCHING-PNPPNP350mV12A50 @ 6A 1V100μA ICBO350mV @ 300mA, 6A60V-40MHz---------RoHS CompliantLead Free--SINGLE-40MHzBUILT-IN BIAS RESISTORunknownR-PSFM-T3Not QualifiedISOLATEDTO-220AB--
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--150°C TJTape & Box (TB)2003--Obsolete1 (Unlimited)------------2SA10180---750mW---PNP--100 @ 5mA 10V1μA1.5V @ 5mA, 50mA-200V----------------50MHz------TO-9270mA
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