Toshiba Semiconductor and Storage 2SA1312-BL(TE85L,F
- Part Number:
- 2SA1312-BL(TE85L,F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2464856-2SA1312-BL(TE85L,F
- Description:
- TRANS PNP 120V 0.1A S-MINI
- ECAD Model:
-
- Datasheet:
- 2SA1312-BL(TE85L,F
Toshiba Semiconductor and Storage 2SA1312-BL(TE85L,F technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SA1312-BL(TE85L,F.
- Factory Lead Time16 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Operating Temperature125°C TJ
- PackagingCut Tape (CT)
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation150mW
- Frequency100MHz
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Gain Bandwidth Product100MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce350 @ 2mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage120V
- Collector Emitter Saturation Voltage-300mV
- Max Breakdown Voltage120V
- Collector Base Voltage (VCBO)-120V
- Emitter Base Voltage (VEBO)-5V
- hFE Min200
- Height1.1mm
- Length2.9mm
- Width1.5mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
2SA1312-BL(TE85L,F Overview
In this device, the DC current gain is 350 @ 2mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2SA1312-BL(TE85L,F Features
the DC current gain for this device is 350 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
2SA1312-BL(TE85L,F Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1312-BL(TE85L,F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 350 @ 2mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2SA1312-BL(TE85L,F Features
the DC current gain for this device is 350 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
2SA1312-BL(TE85L,F Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1312-BL(TE85L,F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SA1312-BL(TE85L,F More Descriptions
Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
120V 150mW 100mA 200@2mA6V 100MHz 300mV@10mA1mA PNP 125¡Í@(Tj) SC-59 Bipolar Transistors - BJT ROHS
General Purpose Transistor (Single)
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
120V 150mW 100mA 200@2mA6V 100MHz 300mV@10mA1mA PNP 125¡Í@(Tj) SC-59 Bipolar Transistors - BJT ROHS
General Purpose Transistor (Single)
The three parts on the right have similar specifications to 2SA1312-BL(TE85L,F.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationFrequencyNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusSupplier Device PackageVoltage - Rated DCCurrent RatingBase Part NumberPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountTransistor ApplicationPolarity/Channel TypeTransition FrequencyContinuous Collector CurrentVCEsat-MaxView Compare
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2SA1312-BL(TE85L,F16 WeeksCopper, Silver, TinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33125°C TJCut Tape (CT)2009Active1 (Unlimited)150mW100MHz1Single150mW100MHzPNP300mV100mA350 @ 2mA 6V100nA ICBO300mV @ 1mA, 10mA120V-300mV120V-120V-5V2001.1mm2.9mm1.5mmNoRoHS Compliant---------------------------- -
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-150°C TJTape & Reel (TR)2003Obsolete1 (Unlimited)200mW-----PNP600mV50mA260 @ 2mA 5V1μA600mV @ 10mA, 100mA55V-55V-------RoHS CompliantMini3-G1-55V-50mA2SA10350200mW55V50mA200MHzLead Free------------------
-
13 WeeksCopper, Silver, TinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33150°C TJTape & Reel (TR)2001Active1 (Unlimited)200mW-1Single-140MHzPNP500mV50mA180 @ 2mA 6V500nA ICBO500mV @ 1mA, 10mA120V-500mV120V-120V-5V180---NoROHS3 Compliant--120V-50mA2SA1514200mW---Lead FreeSILICONe1yes3EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other TransistorsDUALGULL WING260103AMPLIFIERPNP140MHz-50mA0.5 V
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12 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-125°C TJTape & Reel (TR)2013Active1 (Unlimited)150mW----200MHzPNP250mV500mA120 @ 100mA 1V100nA ICBO250mV @ 10mA, 100mA30V-250mV30V-35V-5V25----RoHS Compliant----150mW---------------------500mA-
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