Rohm Semiconductor 2SA1037AKT146S

2SA1037AKT146S Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.A -150mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -150mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.

2SA1037AKT146S Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
the current rating of this device is -150mA
a transition frequency of 140MHz


2SA1037AKT146S Applications
There are a lot of ROHM Semiconductor
2SA1037AKT146S applications of single BJT transistors.


Inverter
Interface
Driver
Muting