Rohm Semiconductor 2SA1036KT146R
- Part Number:
- 2SA1036KT146R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2463924-2SA1036KT146R
- Description:
- TRANS PNP 32V 0.5A SOT-346
- Datasheet:
- 2SA1036KT146R
Rohm Semiconductor 2SA1036KT146R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SA1036KT146R.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC-32V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency200MHz
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SA1036
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)32V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA 3V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
- Collector Emitter Breakdown Voltage32V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-600mV
- Max Breakdown Voltage32V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)-5V
- hFE Min120
- Continuous Collector Current-500mA
- VCEsat-Max0.4 V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SA1036KT146R Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).200MHz is present in the transition frequency.An input voltage of 32V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
2SA1036KT146R Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA1036KT146R Applications
There are a lot of ROHM Semiconductor
2SA1036KT146R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 120 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).200MHz is present in the transition frequency.An input voltage of 32V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
2SA1036KT146R Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA1036KT146R Applications
There are a lot of ROHM Semiconductor
2SA1036KT146R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SA1036KT146R More Descriptions
2SA1036K Series 32 V 0.5 A SMT PNP Medium Power Transistor - SOT-23
32V 200mW 120@100mA,3V 500mA PNP SOT-23-3L Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon
Trans Gp Bjt Pnp 32V 0.5A 3-Pin Smt T/r Rohs Compliant: Yes
32V 200mW 120@100mA,3V 500mA PNP SOT-23-3L Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon
Trans Gp Bjt Pnp 32V 0.5A 3-Pin Smt T/r Rohs Compliant: Yes
The three parts on the right have similar specifications to 2SA1036KT146R.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMin Operating TemperatureView Compare
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2SA1036KT146R13 WeeksCopper, Silver, TinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)2004e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors-32V200mWDUALGULL WING260-500mA200MHz102SA103631Single200mWAMPLIFIER200MHzPNPPNP32V500mA120 @ 100mA 3V1μA ICBO600mV @ 30mA, 300mA32V200MHz-600mV32V40V-5V120-500mA0.4 VNoROHS3 CompliantLead Free---------
-
--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--150°C TJTube2009--Obsolete1 (Unlimited)-----1W---------Single--170MHz-PNP1V5A160 @ 500mA 2V100nA ICBO1V @ 100mA, 4A20V---35V8V160---RoHS CompliantLead FreePW-MOLD150°CPNP1W20V5A170MHz-
-
-Silver, TinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-150°C TJTube2013--Obsolete1 (Unlimited)-----1W----60MHz---1Single1W-60MHz-PNP50V5A120 @ 1A 1V1μA ICBO400mV @ 150mA, 3A50V---60V5V120---RoHS CompliantLead FreePW-MOLD150°CPNP1W50V5A60MHz-55°C
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--150°C TJTape & Reel (TR)2003--Obsolete1 (Unlimited)-----55V200mW----50mA--2SA10350-------PNP600mV50mA260 @ 2mA 5V1μA600mV @ 10mA, 100mA55V--55V------RoHS CompliantLead FreeMini3-G1--200mW55V50mA200MHz-
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