Diodes Incorporated 2N7002DWQ-7-F
- Part Number:
- 2N7002DWQ-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2473788-2N7002DWQ-7-F
- Description:
- MOSFET 2N-CH 60V 0.23A SOT363
- ECAD Model:
-
- Datasheet:
- 2N7002DWQ-7-F
Diodes Incorporated 2N7002DWQ-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2N7002DWQ-7-F.
- Factory Lead Time16 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Max Power Dissipation310mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Reference StandardAEC-Q101
- JESD-30 CodeR-PDSO-G6
- Number of Elements2
- Number of Channels2
- Operating ModeENHANCEMENT MODE
- Power Dissipation310mW
- Turn On Delay Time7 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 50mA, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Drain to Source Voltage (Vdss)60V
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)230mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage70V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureStandard
- Feedback Cap-Max (Crss)5 pF
- Height1.1mm
- RoHS StatusROHS3 Compliant
Description:
The 2N7002DWQ-7-F is a MOSFET 2N-Channel 60V 0.23A SOT363 from Diodes Inc. This device is designed to provide high-speed switching and low on-resistance in a small package. It is suitable for a wide range of applications, including power management, motor control, and signal switching.
Features:
• Low on-resistance
• High-speed switching
• Small package size
• Low gate charge
• Low input capacitance
• Low threshold voltage
• High current handling capability
• RoHS compliant
Applications:
• Power management
• Motor control
• Signal switching
• Automotive
• Industrial
• Consumer electronics
The 2N7002DWQ-7-F is a MOSFET 2N-Channel 60V 0.23A SOT363 from Diodes Inc. This device is designed to provide high-speed switching and low on-resistance in a small package. It is suitable for a wide range of applications, including power management, motor control, and signal switching.
Features:
• Low on-resistance
• High-speed switching
• Small package size
• Low gate charge
• Low input capacitance
• Low threshold voltage
• High current handling capability
• RoHS compliant
Applications:
• Power management
• Motor control
• Signal switching
• Automotive
• Industrial
• Consumer electronics
2N7002DWQ-7-F More Descriptions
Transistor MOSFET Array Dual N-CH 60V 0.23A 6-Pin SOT-363 T/R - Tape and Reel
2N7002DW Series 60 V 7.5 Ohm 0.23 A Dual N-Ch. Enhancement Mode Mosfet - SOT-363
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, AECQ101, DUAL N CH, 60V, SOT-363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 230mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 4.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
2N7002DW Series 60 V 7.5 Ohm 0.23 A Dual N-Ch. Enhancement Mode Mosfet - SOT-363
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, AECQ101, DUAL N CH, 60V, SOT-363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 230mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 4.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
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