2N7002DWH6327XTSA1

Infineon Technologies 2N7002DWH6327XTSA1

Part Number:
2N7002DWH6327XTSA1
Manufacturer:
Infineon Technologies
Ventron No:
3585693-2N7002DWH6327XTSA1
Description:
MOSFET 2N-CH 60V 0.3A SOT363
ECAD Model:
Datasheet:
2N7002DWH6327XTSA1

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Specifications
Infineon Technologies 2N7002DWH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies 2N7002DWH6327XTSA1.
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-VSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    OptiMOS™
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Max Power Dissipation
    500mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    500mW
  • Turn On Delay Time
    3 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    20pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    300mA
  • Gate Charge (Qg) (Max) @ Vgs
    0.6nC @ 10V
  • Rise Time
    3.3ns
  • Fall Time (Typ)
    3.1 ns
  • Turn-Off Delay Time
    5.5 ns
  • Continuous Drain Current (ID)
    115mA
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    60V
  • Drain Current-Max (Abs) (ID)
    0.3A
  • Drain-source On Resistance-Max
    3Ohm
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Feedback Cap-Max (Crss)
    3 pF
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N7002DWH6327XTSA1            Description
   Small signal bipolar junction transistors (BJT) rely on the contact between two different types of semiconductors to switch or amplify electronic signals and power supplies. Transistors are used in almost every modern electronic device, and BJT is often implemented as part of integrated circuits.
2N7002DWH6327XTSA1                Features 
? Dual N-channel ? Enhancement mode ? Logic level ? Avalanche rated ? Fast switching ? Qualified according to AEC Q101 ? 100% lead-free; RoHS compliant ? Halogen-free according to IEC61249-2-21   2N7002DWH6327XTSA1        Applications modern electronic device




2N7002DWH6327XTSA1 More Descriptions
Transistor MOSFET Array Dual N-CH 60V 0.3A 6-Pin SOT-363 T/RAvnet Japan
Dual N-Channel 60 V 3 Ohm 0.4 nC OptiMOS™ Small Signal Mosfet - SOT-363
N CH MOSFET, 60V, 115mA, SOT-363; Transi; N CH MOSFET, 60V, 115mA, SOT-363; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:115mA; Drain Source Voltage Vds, N Channel:60V; On Resistance Rds(on), N Channel:1.6ohm; Rds(on) Test Voltage Vgs:5V
N-Channel Enhancement Mode Field Effect Transistor Product Highlights: Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 5.5 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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