Infineon Technologies 2N7002DWH6327XTSA1
- Part Number:
- 2N7002DWH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3585693-2N7002DWH6327XTSA1
- Description:
- MOSFET 2N-CH 60V 0.3A SOT363
- Datasheet:
- 2N7002DWH6327XTSA1
Infineon Technologies 2N7002DWH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies 2N7002DWH6327XTSA1.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-VSSOP, SC-88, SOT-363
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Max Power Dissipation500mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Operating ModeENHANCEMENT MODE
- Power Dissipation500mW
- Turn On Delay Time3 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds20pF @ 25V
- Current - Continuous Drain (Id) @ 25°C300mA
- Gate Charge (Qg) (Max) @ Vgs0.6nC @ 10V
- Rise Time3.3ns
- Fall Time (Typ)3.1 ns
- Turn-Off Delay Time5.5 ns
- Continuous Drain Current (ID)115mA
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage60V
- Drain Current-Max (Abs) (ID)0.3A
- Drain-source On Resistance-Max3Ohm
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Feedback Cap-Max (Crss)3 pF
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N7002DWH6327XTSA1 Description
Small signal bipolar junction transistors (BJT) rely on the contact between two different types of semiconductors to switch or amplify electronic signals and power supplies. Transistors are used in almost every modern electronic device, and BJT is often implemented as part of integrated circuits.
2N7002DWH6327XTSA1 Features
? Dual N-channel ? Enhancement mode ? Logic level ? Avalanche rated ? Fast switching ? Qualified according to AEC Q101 ? 100% lead-free; RoHS compliant ? Halogen-free according to IEC61249-2-21 2N7002DWH6327XTSA1 Applications modern electronic device
Small signal bipolar junction transistors (BJT) rely on the contact between two different types of semiconductors to switch or amplify electronic signals and power supplies. Transistors are used in almost every modern electronic device, and BJT is often implemented as part of integrated circuits.
2N7002DWH6327XTSA1 Features
? Dual N-channel ? Enhancement mode ? Logic level ? Avalanche rated ? Fast switching ? Qualified according to AEC Q101 ? 100% lead-free; RoHS compliant ? Halogen-free according to IEC61249-2-21 2N7002DWH6327XTSA1 Applications modern electronic device
2N7002DWH6327XTSA1 More Descriptions
Transistor MOSFET Array Dual N-CH 60V 0.3A 6-Pin SOT-363 T/RAvnet Japan
Dual N-Channel 60 V 3 Ohm 0.4 nC OptiMOS Small Signal Mosfet - SOT-363
N CH MOSFET, 60V, 115mA, SOT-363; Transi; N CH MOSFET, 60V, 115mA, SOT-363; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:115mA; Drain Source Voltage Vds, N Channel:60V; On Resistance Rds(on), N Channel:1.6ohm; Rds(on) Test Voltage Vgs:5V
N-Channel Enhancement Mode Field Effect Transistor Product Highlights: Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 5.5 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500
Dual N-Channel 60 V 3 Ohm 0.4 nC OptiMOS Small Signal Mosfet - SOT-363
N CH MOSFET, 60V, 115mA, SOT-363; Transi; N CH MOSFET, 60V, 115mA, SOT-363; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:115mA; Drain Source Voltage Vds, N Channel:60V; On Resistance Rds(on), N Channel:1.6ohm; Rds(on) Test Voltage Vgs:5V
N-Channel Enhancement Mode Field Effect Transistor Product Highlights: Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 5.5 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500
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