2N7002DW-7

Diodes Incorporated 2N7002DW-7

Part Number:
2N7002DW-7
Manufacturer:
Diodes Incorporated
Ventron No:
2477680-2N7002DW-7
Description:
MOSFET 2N-CH 60V 0.23A SOT-363
ECAD Model:
Datasheet:
2N7002DW-7

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Diodes Incorporated 2N7002DW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2N7002DW-7.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Weight
    7.512624mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    7.5Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Max Power Dissipation
    310mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    115mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    200mW
  • Turn On Delay Time
    7 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5 Ω @ 50mA, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    230mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.115A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • Feedback Cap-Max (Crss)
    5 pF
  • Min Breakdown Voltage
    60V
  • Height
    1mm
  • Length
    2.2mm
  • Width
    1.35mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
2N7002DW-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet 2N7002DW-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of 2N7002DW-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
2N7002DW-7 More Descriptions
Transistor - FET N-Channel 60V 200mW
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2N-CH 60V 0.23A SOT-363
2N7002DW-7,MOSFET N-CHANNEL SO
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.