Diodes Incorporated 2N7002DW-7
- Part Number:
- 2N7002DW-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2477680-2N7002DW-7
- Description:
- MOSFET 2N-CH 60V 0.23A SOT-363
- Datasheet:
- 2N7002DW-7
Diodes Incorporated 2N7002DW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2N7002DW-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight7.512624mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance7.5Ohm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- Max Power Dissipation310mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating115mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation200mW
- Turn On Delay Time7 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 50mA, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)230mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.115A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- Feedback Cap-Max (Crss)5 pF
- Min Breakdown Voltage60V
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
2N7002DW-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet 2N7002DW-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of 2N7002DW-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet 2N7002DW-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of 2N7002DW-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
2N7002DW-7 More Descriptions
Transistor - FET N-Channel 60V 200mW
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2N-CH 60V 0.23A SOT-363
2N7002DW-7,MOSFET N-CHANNEL SO
French Electronic Distributor since 1988
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2N-CH 60V 0.23A SOT-363
2N7002DW-7,MOSFET N-CHANNEL SO
French Electronic Distributor since 1988
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