ON Semiconductor 2N6497
- Part Number:
- 2N6497
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069192-2N6497
- Description:
- TRANS NPN 250V 5A TO220AB
- Datasheet:
- 2N6497
ON Semiconductor 2N6497 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6497.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- SubcategoryOther Transistors
- Voltage - Rated DC250V
- Max Power Dissipation80W
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating5A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part Number2N6497
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product5MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)5V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 2.5A 10V
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic5V @ 2A, 5A
- Collector Emitter Breakdown Voltage250V
- Transition Frequency5MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)6V
- hFE Min10
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
2N6497 Overview
This device has a DC current gain of 10 @ 2.5A 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 5A.In this part, there is a transition frequency of 5MHz.The maximum collector current is 5A volts.
2N6497 Features
the DC current gain for this device is 10 @ 2.5A 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 2A, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 5MHz
2N6497 Applications
There are a lot of ON Semiconductor
2N6497 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 10 @ 2.5A 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 5A.In this part, there is a transition frequency of 5MHz.The maximum collector current is 5A volts.
2N6497 Features
the DC current gain for this device is 10 @ 2.5A 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 2A, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 5MHz
2N6497 Applications
There are a lot of ON Semiconductor
2N6497 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6497 More Descriptions
Transistor NPN-silicon Bvceo=250V IC=5A TO-220 Case Switching Power Supply ApplicationsNTE Electronics
TRANS NPN 250V 5A TO220AB
Silicon NPN Transistor High Voltage
TRANS NPN 250V 5A TO220AB
Silicon NPN Transistor High Voltage
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