2N6497

ON Semiconductor 2N6497

Part Number:
2N6497
Manufacturer:
ON Semiconductor
Ventron No:
3069192-2N6497
Description:
TRANS NPN 250V 5A TO220AB
ECAD Model:
Datasheet:
2N6497

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Specifications
ON Semiconductor 2N6497 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6497.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2006
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    LEADFORM OPTIONS ARE AVAILABLE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    250V
  • Max Power Dissipation
    80W
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    5A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    2N6497
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    5MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    5V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 2.5A 10V
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    5V @ 2A, 5A
  • Collector Emitter Breakdown Voltage
    250V
  • Transition Frequency
    5MHz
  • Collector Emitter Saturation Voltage
    1V
  • Collector Base Voltage (VCBO)
    350V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    10
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
2N6497 Overview
This device has a DC current gain of 10 @ 2.5A 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 5A.In this part, there is a transition frequency of 5MHz.The maximum collector current is 5A volts.

2N6497 Features
the DC current gain for this device is 10 @ 2.5A 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 2A, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 5MHz


2N6497 Applications
There are a lot of ON Semiconductor
2N6497 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N6497 More Descriptions
Transistor NPN-silicon Bvceo=250V IC=5A TO-220 Case Switching Power Supply ApplicationsNTE Electronics
TRANS NPN 250V 5A TO220AB
Silicon NPN Transistor High Voltage
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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