ON Semiconductor 2N6488G
- Part Number:
- 2N6488G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845267-2N6488G
- Description:
- TRANS NPN 80V 15A TO220AB
- Datasheet:
- 2N6488G
ON Semiconductor 2N6488G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6488G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation1.8W
- Peak Reflow Temperature (Cel)260
- Current Rating15A
- Frequency5MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6488
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation40W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product5MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5A 4V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic3.5V @ 5A, 15A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency5MHz
- Collector Emitter Saturation Voltage3.5V
- Collector Base Voltage (VCBO)90V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6488G Overview
In this device, the DC current gain is 20 @ 5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 5A, 15A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 5MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
2N6488G Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz
2N6488G Applications
There are a lot of ON Semiconductor
2N6488G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 20 @ 5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 5A, 15A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 5MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
2N6488G Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz
2N6488G Applications
There are a lot of ON Semiconductor
2N6488G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6488G More Descriptions
Bipolar (BJT) Transistor NPN 80V 15A 5MHz 1.8W Through Hole TO-220AB
Trans GP BJT NPN 80V 15A 1800mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, NPN, 80 V, 15 A
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 80VDC, IC 15A, PD 75W, TO-220AB, VCBO 90VDC | ON Semiconductor 2N6488G
80V 1.8W 15A 20@4A5V 5MHz 3.5V@15A5A NPN -65¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 5MHz; Power Dissipation Pd: 40W; DC Collector Current: 15A; DC Current Gain hFE: 5hFE; Transistor Case Style: TO-22
Bipolar Transistor, Npn, 80V To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:15A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:5Mhz Rohs Compliant: Yes |Onsemi 2N6488G.
Trans GP BJT NPN 80V 15A 1800mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, NPN, 80 V, 15 A
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 80VDC, IC 15A, PD 75W, TO-220AB, VCBO 90VDC | ON Semiconductor 2N6488G
80V 1.8W 15A 20@4A5V 5MHz 3.5V@15A5A NPN -65¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 5MHz; Power Dissipation Pd: 40W; DC Collector Current: 15A; DC Current Gain hFE: 5hFE; Transistor Case Style: TO-22
Bipolar Transistor, Npn, 80V To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:15A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:5Mhz Rohs Compliant: Yes |Onsemi 2N6488G.
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