2N6488G

ON Semiconductor 2N6488G

Part Number:
2N6488G
Manufacturer:
ON Semiconductor
Ventron No:
2845267-2N6488G
Description:
TRANS NPN 80V 15A TO220AB
ECAD Model:
Datasheet:
2N6488G

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Specifications
ON Semiconductor 2N6488G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6488G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LEADFORM OPTIONS ARE AVAILABLE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    80V
  • Max Power Dissipation
    1.8W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    15A
  • Frequency
    5MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    2N6488
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    40W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    5MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 5A 4V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    3.5V @ 5A, 15A
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    5MHz
  • Collector Emitter Saturation Voltage
    3.5V
  • Collector Base Voltage (VCBO)
    90V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    20
  • Height
    15.748mm
  • Length
    10.2616mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N6488G Overview
In this device, the DC current gain is 20 @ 5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 5A, 15A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 5MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.

2N6488G Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz


2N6488G Applications
There are a lot of ON Semiconductor
2N6488G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N6488G More Descriptions
Bipolar (BJT) Transistor NPN 80V 15A 5MHz 1.8W Through Hole TO-220AB
Trans GP BJT NPN 80V 15A 1800mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, NPN, 80 V, 15 A
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 80VDC, IC 15A, PD 75W, TO-220AB, VCBO 90VDC | ON Semiconductor 2N6488G
80V 1.8W 15A 20@4A5V 5MHz 3.5V@15A5A NPN -65¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 5MHz; Power Dissipation Pd: 40W; DC Collector Current: 15A; DC Current Gain hFE: 5hFE; Transistor Case Style: TO-22
Bipolar Transistor, Npn, 80V To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:15A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:5Mhz Rohs Compliant: Yes |Onsemi 2N6488G.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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