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2N6426G

ON Semiconductor 2N6426G

Part Number:
2N6426G
Manufacturer:
ON Semiconductor
Ventron No:
2465951-2N6426G
Description:
TRANS NPN DARL 40V 0.5A TO92
ECAD Model:
Datasheet:
2N6426G

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Specifications
ON Semiconductor 2N6426G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6426G.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Power - Max
    625mW
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN - Darlington
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30000 @ 100mA 5V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 500μA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Current - Collector (Ic) (Max)
    500mA
  • RoHS Status
    ROHS3 Compliant
Description
2N6426G Overview
DC current gain in this device equals 30000 @ 100mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 500μA, 500mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N6426G Features
the DC current gain for this device is 30000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 500μA, 500mA


2N6426G Applications
There are a lot of Rochester Electronics, LLC
2N6426G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N6426G More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 30000 @ 100mA 5V 500mA 625mW 40V
NPN Bipolar Darlington Transistor
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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