ON Semiconductor 2N6292G
- Part Number:
- 2N6292G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463253-2N6292G
- Description:
- TRANS NPN 70V 7A TO220AB
- ECAD Model:
-
- Datasheet:
- 2N6292G
ON Semiconductor 2N6292G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6292G.
- Lifecycle StatusACTIVE (Last Updated: 20 hours ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- SubcategoryOther Transistors
- Voltage - Rated DC70V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating7A
- Frequency4MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6292
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation40W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product4MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)70V
- Max Collector Current7A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2A 4V
- Current - Collector Cutoff (Max)1mA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic3.5V @ 3A, 7A
- Collector Emitter Breakdown Voltage70V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage3.5V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6292G Overview
This device has a DC current gain of 30 @ 2A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 3.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 7A.In this part, there is a transition frequency of 4MHz.The maximum collector current is 7A volts.
2N6292G Features
the DC current gain for this device is 30 @ 2A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
a transition frequency of 4MHz
2N6292G Applications
There are a lot of ON Semiconductor
2N6292G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 30 @ 2A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 3.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 7A.In this part, there is a transition frequency of 4MHz.The maximum collector current is 7A volts.
2N6292G Features
the DC current gain for this device is 30 @ 2A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
a transition frequency of 4MHz
2N6292G Applications
There are a lot of ON Semiconductor
2N6292G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6292G More Descriptions
Trans GP BJT NPN 70V 7A 40000mW 3-Pin(3 Tab) TO-220AB Tube
2N Series 70 V 7 A NPN Complementary Silicon Plastic Power Transistor - TO-220AB
7.0 A, 70 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 70VDC, IC 7A, PD 40W, TO-220AB, VCBO 80VDC | ON Semiconductor 2N6292G
POWER TRANSISTOR, NPN, 70V, TO-220
TRANSISTOR, BIPOL, NPN, 70V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 70V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 40W; DC Collector Current: 7A; DC Current Gain hFE: 2.3hFE; Transis
Power Transistor, Npn, 70V, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:70V; Continuous Collector Current:7A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:4Mhz Rohs Compliant: Yes |Onsemi 2N6292G.
2N Series 70 V 7 A NPN Complementary Silicon Plastic Power Transistor - TO-220AB
7.0 A, 70 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 70VDC, IC 7A, PD 40W, TO-220AB, VCBO 80VDC | ON Semiconductor 2N6292G
POWER TRANSISTOR, NPN, 70V, TO-220
TRANSISTOR, BIPOL, NPN, 70V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 70V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 40W; DC Collector Current: 7A; DC Current Gain hFE: 2.3hFE; Transis
Power Transistor, Npn, 70V, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:70V; Continuous Collector Current:7A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:4Mhz Rohs Compliant: Yes |Onsemi 2N6292G.
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