Fairchild/ON Semiconductor 2N6076
- Part Number:
- 2N6076
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2466083-2N6076
- Description:
- TRANS PNP 25V 0.5A TO-92
- Datasheet:
- 2N6076
Fairchild/ON Semiconductor 2N6076 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N6076.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Supplier Device PackageTO-92-3
- Operating Temperature150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max625mW
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max)25V
- Current - Collector (Ic) (Max)500mA
- RoHS StatusROHS3 Compliant
2N6076 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N6076 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA
the supplier device package of TO-92-3
2N6076 Applications
There are a lot of Rochester Electronics, LLC
2N6076 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N6076 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA
the supplier device package of TO-92-3
2N6076 Applications
There are a lot of Rochester Electronics, LLC
2N6076 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6076 More Descriptions
Bulk Through Hole PNP 2N6076 Bipolar (BJT) Transistor 100 @ 10mA 1V 500mA 625mW 25V
Bipolar Transistors - BJT PNP 25V 10mA 500hfe
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:500mA; Voltage Rating:25V ;RoHS Compliant: Yes
Bipolar Transistors - BJT PNP 25V 10mA 500hfe
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:500mA; Voltage Rating:25V ;RoHS Compliant: Yes
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