ON Semiconductor 2N6052
- Part Number:
- 2N6052
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466829-2N6052
- Description:
- TRANS PNP DARL 100V 12A TO3
- Datasheet:
- 2N6052 Power Transistors
ON Semiconductor 2N6052 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6052.
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Case ConnectionCOLLECTOR
- Power - Max150W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 6A 3V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic3V @ 120mA, 12A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)12A
- Transition Frequency4MHz
- RoHS StatusNon-RoHS Compliant
2N6052 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 6A 3V.When VCE saturation is 3V @ 120mA, 12A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 4MHz.The device has a 100V maximal voltage - Collector Emitter Breakdown.
2N6052 Features
the DC current gain for this device is 750 @ 6A 3V
the vce saturation(Max) is 3V @ 120mA, 12A
a transition frequency of 4MHz
2N6052 Applications
There are a lot of Rochester Electronics, LLC
2N6052 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 6A 3V.When VCE saturation is 3V @ 120mA, 12A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 4MHz.The device has a 100V maximal voltage - Collector Emitter Breakdown.
2N6052 Features
the DC current gain for this device is 750 @ 6A 3V
the vce saturation(Max) is 3V @ 120mA, 12A
a transition frequency of 4MHz
2N6052 Applications
There are a lot of Rochester Electronics, LLC
2N6052 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6052 More Descriptions
Trans Darlington PNP 100V 12A 150000mW 3-Pin(2 Tab) TO-3
Silicon PNP Transistors Darlington Power Amplifier
Transistor Pnp Silicon-Darlington Bvceo=100V Ic=12A To-3 Case General Purpose Amp Low Freq Switching Rohs Compliant: Yes
Silicon PNP Transistors Darlington Power Amplifier
Transistor Pnp Silicon-Darlington Bvceo=100V Ic=12A To-3 Case General Purpose Amp Low Freq Switching Rohs Compliant: Yes
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