2N6052

ON Semiconductor 2N6052

Part Number:
2N6052
Manufacturer:
ON Semiconductor
Ventron No:
2466829-2N6052
Description:
TRANS PNP DARL 100V 12A TO3
ECAD Model:
Datasheet:
2N6052 Power Transistors

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Specifications
ON Semiconductor 2N6052 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6052.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    2
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
  • Case Connection
    COLLECTOR
  • Power - Max
    150W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP - Darlington
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 6A 3V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 120mA, 12A
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Current - Collector (Ic) (Max)
    12A
  • Transition Frequency
    4MHz
  • RoHS Status
    Non-RoHS Compliant
Description
2N6052 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 6A 3V.When VCE saturation is 3V @ 120mA, 12A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 4MHz.The device has a 100V maximal voltage - Collector Emitter Breakdown.

2N6052 Features
the DC current gain for this device is 750 @ 6A 3V
the vce saturation(Max) is 3V @ 120mA, 12A
a transition frequency of 4MHz


2N6052 Applications
There are a lot of Rochester Electronics, LLC
2N6052 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N6052 More Descriptions
Trans Darlington PNP 100V 12A 150000mW 3-Pin(2 Tab) TO-3
Silicon PNP Transistors Darlington Power Amplifier
Transistor Pnp Silicon-Darlington Bvceo=100V Ic=12A To-3 Case General Purpose Amp Low Freq Switching Rohs Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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