ON Semiconductor 2N6034G
- Part Number:
- 2N6034G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845424-2N6034G
- Description:
- TRANS PNP DARL 40V 4A TO225AA
- Datasheet:
- 2N6034G
ON Semiconductor 2N6034G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6034G.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating4A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6034
- Pin Count3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation1.5W
- Transistor ApplicationAMPLIFIER
- Halogen FreeHalogen Free
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A 3V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency25MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current4A
- Height11.04mm
- Length7.74mm
- Width2.66mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6034G Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A maximum collector current of 4A volts is possible.
2N6034G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6034G Applications
There are a lot of ON Semiconductor
2N6034G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A maximum collector current of 4A volts is possible.
2N6034G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6034G Applications
There are a lot of ON Semiconductor
2N6034G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6034G More Descriptions
Bipolar (BJT) Transistor PNP - Darlington 40V 4A 40W Through Hole TO-225AA
4.0 A, 40 V PNP Darlington Bipolar Power Transistor
ON SEMICONDUCTOR - 2N6034G - Bipolar (BJT) Single Transistor, Darlington, PNP, 40 V, 40 W, -4 A, 750 hFE
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 40V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
2N Series 40 V 4 A Darlington Complementary Silicon Power Transistor - TO-225
TRANSISTOR, PNP, -40V, -4A, TO-225; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Col; Available until stocks are exhausted Alternative available
4.0 A, 40 V PNP Darlington Bipolar Power Transistor
ON SEMICONDUCTOR - 2N6034G - Bipolar (BJT) Single Transistor, Darlington, PNP, 40 V, 40 W, -4 A, 750 hFE
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 40V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
2N Series 40 V 4 A Darlington Complementary Silicon Power Transistor - TO-225
TRANSISTOR, PNP, -40V, -4A, TO-225; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Col; Available until stocks are exhausted Alternative available
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