ON Semiconductor 2N5884
- Part Number:
- 2N5884
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466795-2N5884
- Description:
- TRANS PNP 80V 25A TO3
- Datasheet:
- 2N5884
ON Semiconductor 2N5884 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5884.
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations2
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max200W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 10A 4V
- Current - Collector Cutoff (Max)2mA
- Vce Saturation (Max) @ Ib, Ic4V @ 6.25A, 25A
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)25A
- Transition Frequency4MHz
- Frequency - Transition4MHz
- RoHS StatusNon-RoHS Compliant
2N5884 Overview
This device has a DC current gain of 20 @ 10A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 4MHz.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
2N5884 Features
the DC current gain for this device is 20 @ 10A 4V
the vce saturation(Max) is 4V @ 6.25A, 25A
a transition frequency of 4MHz
2N5884 Applications
There are a lot of Rochester Electronics, LLC
2N5884 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 20 @ 10A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 4MHz.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
2N5884 Features
the DC current gain for this device is 20 @ 10A 4V
the vce saturation(Max) is 4V @ 6.25A, 25A
a transition frequency of 4MHz
2N5884 Applications
There are a lot of Rochester Electronics, LLC
2N5884 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5884 More Descriptions
Transistor PNP Silicon 80 Volt IC-25 AMP TO-3 Case High Power Amplifier Applications Comp To 2n5886NTE Electronics
Silicon Power Transistor High Power Audio Amplifier
TRANS PNP 80V 25A TO204
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Silicon Power Transistor High Power Audio Amplifier
TRANS PNP 80V 25A TO204
T-PNP SI- PO AMP
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