Fairchild/ON Semiconductor 2N5830

Name: 2N5830
Brand: Fairchild/ON Semiconductor
SKU: 2848090-2N5830
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N5830

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848090-2N5830

Description:: TRANS NPN 100V 0.2A TO-92

ECAD Model:

Datasheet:: 2N5830

Specifications

Fairchild/ON Semiconductor 2N5830 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5830.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
200mA
RoHS Status
ROHS3 Compliant

Description

2N5830 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 10mA 5V.When VCE saturation is 250mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 100V maximal voltage - Collector Emitter Breakdown.

2N5830 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA

2N5830 Applications
There are a lot of Rochester Electronics, LLC
2N5830 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N5830 More Descriptions

Bipolar (BJT) Transistor NPN 100V 200mA 625mW Through Hole TO-92-3 - Bulk
Small Signal Bipolar Transistor, 0.2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
PNP Silicon High Current Transistor 100V 200mA TO-92
Trans GP BJT NPN 100V 0.2A 3-Pin TO-92 Bulk
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics.
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:100V; Power Dissipation, Pd:625mW; DC Collector Current:200mA; DC Current Gain Max (hfe):80; Operating Temperature Range:-55°C to 150°C ;RoHS Compliant: Yes

Certification