ON Semiconductor 2N5551

Name: 2N5551
Brand: ON Semiconductor
SKU: 2847559-2N5551
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N5551

Manufacturer:: ON Semiconductor

Ventron No:: 2847559-2N5551

Description:: TRANS NPN 160V 0.6A TO-92

ECAD Model:

Datasheet:: 2N5550, 5551

Specifications

ON Semiconductor 2N5551 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5551.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
160V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
100MHz
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant

Description

2N5551 Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.As a result, the part has a transition frequency of 100MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N5551 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz

2N5551 Applications
There are a lot of Rochester Electronics, LLC
2N5551 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N5551 More Descriptions

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:300MHz; Power Dissipation Pd:625mW; DC
Bipolar Transistor, Npn, 160V To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:160V; Continuous Collector Current:600Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Multicomp Pro 2N5551
TRANSISTOR,NPN,0.6A,160V,TO92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 600mA; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 300MHz; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C

Certification