Fairchild/ON Semiconductor 2N5550BU

Name: 2N5550BU
Brand: Fairchild/ON Semiconductor
SKU: 2476540-2N5550BU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N5550BU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2476540-2N5550BU

Description:: TRANS NPN 140V 0.6A TO-92

ECAD Model:

Datasheet:: 2N5550BU

Specifications

Fairchild/ON Semiconductor 2N5550BU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5550BU.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
140V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
100MHz
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant

Description

2N5550BU Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 140V maximal voltage is present.

2N5550BU Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz

2N5550BU Applications
There are a lot of Rochester Electronics, LLC
2N5550BU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N5550BU More Descriptions

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 60 @ 10mA 5V 100nA ICBO 625mW 300MHz
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 Bulk
Small Signal NPN Bipolar Transistor

Certification